BC856B

Symbol Micros: TBC856b c

101256

TBC856b c

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor PNP; 475; 200mW; 65V; 100mA; 100MHz; -55°C ~ 150°C; Replacement: BC856B-DIO; BC856B-AU_R1_000A1; BC856B-YAN;

Parameters

Power dissipation:	200mW
Current gain factor:	475
Cutoff frequency:	100MHz
Case:	SOT23
Max. collector current:	100mA
Max collector-emmiter voltage:	65V
Operating temperature (range):	-55°C ~ 150°C

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Estimated date:
2025-06-10

Quantity of pcs.: 30000

• Parameters

Power dissipation:	200mW
Current gain factor:	475
Cutoff frequency:	100MHz
Case:	SOT23
Max. collector current:	100mA
Max collector-emmiter voltage:	65V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	PNP

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