BSC123N08NS3 G

Symbol Micros: TBSC123n08ns3

57926

TBSC123n08ns3

Contractor Symbol:

Case : TDSON08

Datasheet

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N-MOSFET 55A 80V 66W 0.0123Ω

Parameters

Open channel resistance:	24mOhm
Max. drain current:	55A
Max. power loss:	66W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	80V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	24mOhm
Max. drain current:	55A
Max. power loss:	66W
Case:	TDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	80V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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