BSC123N08NS3 G

Symbol Micros: TBSC123n08ns3
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Case : TDSON08
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N-MOSFET 55A 80V 66W 0.0123Ω
Parameters
Open channel resistance: 24mOhm
Max. drain current: 55A
Max. power loss: 66W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 80V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 24mOhm
Max. drain current: 55A
Max. power loss: 66W
Case: TDSON08
Manufacturer: Infineon Technologies
Max. drain-source voltage: 80V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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