BSP372

Symbol Micros: TBSP372
Contractor Symbol:
Case : SOT223
Transistor N-Channel MOSFET; 100V; 20V; 270mOhm; 1,8A; 1,8W; -55°C ~ 150°C;
Parameters
Open channel resistance: 270mOhm
Max. drain current: 1,8A
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Manufacturer:: Infineon Manufacturer part number: BSP372N H6327 RoHS Case style: SOT223t/r Datasheet
In stock:
75 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,5355 0,3370 0,2793 0,2493 0,2331
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Packaging:
100
Manufacturer:: Infineon Manufacturer part number: BSP372NH6327XTSA1 Case style: SOT223  
External warehouse:
7000 pcs.
Quantity of pcs. 1000+ (Please wait for the order confirmation)
Net price (EUR) 0,2660
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: BSP372NH6327XTSA1 Case style: SOT223  
External warehouse:
875 pcs.
Quantity of pcs. 25+ (Please wait for the order confirmation)
Net price (EUR) 0,3156
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 270mOhm
Max. drain current: 1,8A
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD