BSP372

Symbol Micros: TBSP372
Contractor Symbol:
Case : SOT223
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Transistor N-Channel MOSFET; 100V; 20V; 270mOhm; 1,8A; 1,8W; -55°C ~ 150°C;
Parameters
Open channel resistance: 270mOhm
Max. drain current: 1,8A
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSP372N H6327 RoHS Case style: SOT223t/r Datasheet
In stock:
75 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6435 0,4051 0,3357 0,2986 0,2801
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Packaging:
100
Open channel resistance: 270mOhm
Max. drain current: 1,8A
Max. power loss: 1,8W
Case: SOT223
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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