BSS123 smd

Symbol Micros: TBSS123
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
N-MOSFET 170mA 100V 360mW 6Ω BSS123, BSS123L6327, BSS123LT1G, BSS123-7-F
Parameters
Open channel resistance: 6Ohm
Max. drain current: 170mA
Max. power loss: 225mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: BSS123LT1G RoHS Case style: SOT23t/r Datasheet
In stock:
11450 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1959 0,0994 0,0602 0,0477 0,0435
Add to comparison tool
Packaging:
3000
Open channel resistance: 6Ohm
Max. drain current: 170mA
Max. power loss: 225mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols