BSS169

Micros part number: TBSS169
Package: SOT23
N-MOSFET 170mA 100V 360mW 6Ω
Parameters
Open channel resistance: 12Ohm
Max. drain current: 170mA
Max. power loss: 360mW
Housing: SOT23
Max. drain-source voltage: 100V
Producer: Infineon Technologies
Transistor type: N-MOSFET
         
 
Pozycja dostępna na zamówienie
Open channel resistance: 12Ohm
Max. drain current: 170mA
Max. power loss: 360mW
Housing: SOT23
Max. drain-source voltage: 100V
Producer: Infineon Technologies
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Montage: SMD