BSS169H6327 HXY MOSFET

Symbol Micros: TBSS169 HXY
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Case : SOT23
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Transistor N-Channel MOSFET; 100V; 20V; 9Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS169 E6327; BSS169 E6906; BSS169H6327XTSA1; BSS169H6906XTSA1;
Parameters
Open channel resistance: 9Ohm
Max. drain current: 170mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: BSS169H6327 RoHS Case style: SOT23t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1193 0,0548 0,0297 0,0223 0,0199
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Packaging:
3000
Open channel resistance: 9Ohm
Max. drain current: 170mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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