BSS83PH6327-HXY SOT23 HXY MOSFET

Symbol Micros: TBSS83p HXY
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Case : SOT23
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Transistor P-Channel MOSFET; 60V; 20V; 200mOhm; 2A; 1,5W; -55°C ~ 150°C; Substitute: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; SP000702486;
Parameters
Open channel resistance: 200mOhm
Max. drain current: 2A
Max. power loss: 1,5W
Case: SOT23
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
         
 
Item available on request
Open channel resistance: 200mOhm
Max. drain current: 2A
Max. power loss: 1,5W
Case: SOT23
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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