BSZ097N04LSG TSDSON-8

Symbol Micros: TBSZ097n04lsg

52209

TBSZ097n04lsg

Contractor Symbol:

Case : TSDSON08

Datasheet

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N-MOSFET 40V 40A 35W 0.097Ω

Parameters

Open channel resistance:	14,2mOhm
Max. drain current:	40A
Max. power loss:	35W
Case:	TSDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: BSZ097N04LSGATMA1 Case style: TSDSON08  

External warehouse:

10000 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2005

Add to comparison tool Add inquiry (RFQ)

Packaging:
5000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: BSZ097N04LSGATMA1 Case style: TSDSON08  

External warehouse:

1623979 pcs.

Quantity of pcs.	5000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1288

Add to comparison tool Add inquiry (RFQ)

Packaging:
5000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	14,2mOhm
Max. drain current:	40A
Max. power loss:	35W
Case:	TSDSON08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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