DMG1012T-7 HXY MOSFET

Symbol Micros: TDMG1012T-7 HXY
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Case : SOT523
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Transistor N-Channel MOSFET; 20V; 8V; 150mOhm; 800mA; 150mW; -55°C ~ 150°C; Equivalent: DMG1012T-13;
Parameters
Open channel resistance: 150mOhm
Max. drain current: 800mA
Max. power loss: 150mW
Case: SOT523
Manufacturer: HXY MOSFET
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: DMG1012T-7 RoHS Case style: SOT523 Datasheet
In stock:
3000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1277 0,0587 0,0319 0,0239 0,0213
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Packaging:
3000
Open channel resistance: 150mOhm
Max. drain current: 800mA
Max. power loss: 150mW
Case: SOT523
Manufacturer: HXY MOSFET
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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