FDB33N25TM

Symbol Micros: TFDB33N25TM

91204

TFDB33N25TM

Contractor Symbol:

Case : D2PAK

Datasheet

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N-MOSFET 33A 250V 235W 0.094Ω

Parameters

Open channel resistance:	94mOhm
Max. power loss:	235W
Max. drain current:	33A
Case:	D2PAK
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	250V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FDB33N25TM RoHS Case style: D2PAK t/r  

In stock:

35 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,2875	0,9015	0,7673	0,7014	0,6779

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	94mOhm
Max. power loss:	235W
Max. drain current:	33A
Case:	D2PAK
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	250V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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