FDN338P UMW

Symbol Micros: TFDN338p UMW
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Case : SOT23
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Transistor P-Channel MOSFET; 20V; 8V; 142mOhm; 2,8A; 400mW; -55°C ~ 150°C; Equivalent: FDN338P Onsemi;
Parameters
Open channel resistance: 142mOhm
Max. drain current: 2,8A
Max. power loss: 400mW
Case: SOT23
Manufacturer: UMW
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
         
 
Item available on request
Open channel resistance: 142mOhm
Max. drain current: 2,8A
Max. power loss: 400mW
Case: SOT23
Manufacturer: UMW
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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