FGH40N60SMD

Symbol Micros: TFGH40N60smd

91141

TFGH40N60smd

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 600V 80A 349W

Parameters

Gate charge:	119nC
Max. dissipated power:	349W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: FGH40N60SMD RoHS Case style: TO247  

In stock:

80 pcs.

Quantity of pcs.	1+	5+	30+	90+	180+
Net price (EUR)	2,7165	2,2372	2,0222	1,9637	1,9403

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Packaging:
30/90 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: FGH40N60SMD Case style: TO247  

External warehouse:

63318 pcs.

Quantity of pcs.	60+ (Please wait for the order confirmation)
Net price (EUR)	2,1424

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	119nC
Max. dissipated power:	349W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Operating temperature (range):	-55°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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