FGH40T100SMD TO247
Symbol Micros:
TFGH40T100smd
Case : TO247
IGBT Transistors 1000V 40A Field Stop Trench IGBT
Parameters
| Gate charge: | 398nC |
| Max. dissipated power: | 333W |
| Max. collector current: | 80A |
| Max collector current (impulse): | 120A |
| Forvard volatge [Vgeth]: | 4,2V ~ 6,5V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Gate charge: | 398nC |
| Max. dissipated power: | 333W |
| Max. collector current: | 80A |
| Max collector current (impulse): | 120A |
| Forvard volatge [Vgeth]: | 4,2V ~ 6,5V |
| Case: | TO247 |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 1000V |
| Operating temperature (range): | -55°C ~ 175°C |
| Gate-emitter voltage: | 25V |
| Mounting: | THT |
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