IKW30N60H3
Symbol Micros:
TIKW30n60h3
Case : TO247
60A; 600V; 187W; IGBT w/ Diode
Parameters
Gate charge: | 165nC |
Max. dissipated power: | 187W |
Max. collector current: | 60A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Gate charge: | 165nC |
Max. dissipated power: | 187W |
Max. collector current: | 60A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
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