IKW75N60T

Symbol Micros: TIKW75n60t

104467

TIKW75n60t

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C;

Parameters

Gate charge:	470nC
Max. dissipated power:	428W
Max collector current (impulse):	225A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW75N60TFKSA1 RoHS Case style: TO247 Datasheet

In stock:

8 pcs.

Quantity of pcs.	1+	5+	30+	60+	120+
Net price (EUR)	5,0749	4,5577	4,3133	4,2639	4,2287

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Packaging:
30/60 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: IKW75N60T RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	5,0514	4,4872	4,1487	3,9795	3,8855

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	470nC
Max. dissipated power:	428W
Max collector current (impulse):	225A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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