IKW75N60T

Symbol Micros: TIKW75n60t
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Case : TO247
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80A; 600V; 428W; IGBT w/ Diode
Parameters
Gate charge: 470nC
Max. dissipated power: 428W
Max. collector current: 80A
Max collector current (impulse): 225A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKW75N60TFKSA1 RoHS Case style: TO247 Datasheet
In stock:
31 pcs.
Quantity of pcs. 1+ 5+ 30+ 60+ 120+
Net price (EUR) 7,6362 6,1417 5,4349 5,2940 5,1947
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Packaging:
30/60
Gate charge: 470nC
Max. dissipated power: 428W
Max. collector current: 80A
Max collector current (impulse): 225A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V

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