IKW75N60T

Symbol Micros: TIKW75n60t
Contractor Symbol:
Case : TO247
Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C;
Parameters
Gate charge: 470nC
Max. dissipated power: 428W
Max collector current (impulse): 225A
Max. collector current: 80A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKW75N60T RoHS Case style: TO247 Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 5,0521 4,4879 4,1493 3,9801 3,8860
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Packaging:
30
Manufacturer:: Infineon Manufacturer part number: IKW75N60TFKSA1 RoHS Case style: TO247 Datasheet
In stock:
8 pcs.
Quantity of pcs. 1+ 5+ 30+ 60+ 120+
Net price (EUR) 5,0756 4,5584 4,3139 4,2645 4,2293
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Packaging:
30/60
Manufacturer:: Infineon Manufacturer part number: IKW75N60TFKSA1 Case style: TO247  
External warehouse:
480 pcs.
Quantity of pcs. 60+ (Please wait for the order confirmation)
Net price (EUR) 4,2293
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Gate charge: 470nC
Max. dissipated power: 428W
Max collector current (impulse): 225A
Max. collector current: 80A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Operating temperature (range): -40°C ~ 175°C
Collector-emitter voltage: 600V
Gate-emitter voltage: 20V
Mounting: THT