IPB042N10N3G Infineon
 Symbol Micros:
 
 TIPB042n10n3g 
 
  
 
 
 
 
 Case : TO263/3
 
 
 
 N-MOSFET 100V 100A 214W 4.2mΩ IPB042N10N3GATMA1 IPB042N10N3GATMA1 IPB042N10N3GE8187ATMA1 
 
 
 
 Parameters 
 
 	
		
											
 
 
 
 | Open channel resistance: | 7,4mOhm | 
| Max. drain current: | 137A | 
| Max. power loss: | 214W | 
| Case: | TO263/3 | 
| Manufacturer: | Infineon Technologies | 
| Max. drain-source voltage: | 100V | 
| Transistor type: | N-MOSFET | 
 
 
 Manufacturer:: Infineon
 
 
 Manufacturer part number: IPB042N10N3GATMA1
 
 
 Case style: TO263/3
 
 
 
  
 
 
 
 
 
 External warehouse:
 
 
 26000 pcs.
 
 
 | Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). | 
|---|---|
| Net price (EUR) | 0,6594 | 
 
 
 Manufacturer:: Infineon
 
 
 Manufacturer part number: IPB042N10N3GATMA1
 
 
 Case style: TO263/3
 
 
 
  
 
 
 
 
 
 External warehouse:
 
 
 32000 pcs.
 
 
 | Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). | 
|---|---|
| Net price (EUR) | 0,6943 | 
| Open channel resistance: | 7,4mOhm | 
| Max. drain current: | 137A | 
| Max. power loss: | 214W | 
| Case: | TO263/3 | 
| Manufacturer: | Infineon Technologies | 
| Max. drain-source voltage: | 100V | 
| Transistor type: | N-MOSFET | 
| Max. gate-source Voltage: | 20V | 
| Operating temperature (range): | -55°C ~ 175°C | 
| Mounting: | SMD | 
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