IPB042N10N3G Infineon
Symbol Micros:
TIPB042n10n3g
Case : TO263/3
N-MOSFET 100V 100A 214W 4.2mΩ IPB042N10N3GATMA1 IPB042N10N3GATMA1 IPB042N10N3GE8187ATMA1
Parameters
| Open channel resistance: | 7,4mOhm |
| Max. drain current: | 137A |
| Max. power loss: | 214W |
| Case: | TO263/3 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 7,4mOhm |
| Max. drain current: | 137A |
| Max. power loss: | 214W |
| Case: | TO263/3 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols