IPD040N03LG Infineon

Symbol Micros: TIPD040n03lg

118162

TIPD040n03lg

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Case : TO252/3 (DPAK)

Datasheet

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N-MOSFET 30V 90A 79W 4mΩ

Parameters

Open channel resistance:	5,9mOhm
Max. drain current:	90A
Max. power loss:	79W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	5,9mOhm
Max. drain current:	90A
Max. power loss:	79W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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