IPP60R190C6

Symbol Micros: TIPP60r190c6

57972

TIPP60r190c6

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET 20.2A 600V 151W 0.19Ω

Parameters

Open channel resistance:	440mOhm
Max. drain current:	20,2A
Max. power loss:	151W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPP60R190C6 RoHS Case style: TO220 Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	5+	50+	100+	300+
Net price (EUR)	2,1392	1,6976	1,4781	1,4521	1,4261

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Packaging:
50/100 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IPP60R190C6XKSA1 Case style: TO220  

External warehouse:

70 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,4964

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	440mOhm
Max. drain current:	20,2A
Max. power loss:	151W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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