IPP60R190C6

Symbol Micros: TIPP60r190c6
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Case : TO220
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N-MOSFET 20.2A 600V 151W 0.19Ω
Parameters
Open channel resistance: 440mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPP60R190C6 RoHS Case style: TO220 Datasheet
In stock:
100 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 200+
Net price (EUR) 4,3864 3,5091 3,0451 2,9850 2,9435
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Packaging:
50/100
Open channel resistance: 440mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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