IRF3808S

Symbol Micros: TIRF3808s
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Case : TO263 (D2PAK)
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N-MOSFET HEXFET 75V 106A 200W 0,007Ω
Parameters
Open channel resistance: 7mOhm
Max. drain current: 106A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 75V
Transistor type: N-MOSFET
         
 
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Open channel resistance: 7mOhm
Max. drain current: 106A
Max. power loss: 200W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 75V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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