IRF520N

Symbol Micros: TIRF520n
Contractor Symbol:
Case : TO220
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N-MOSFET 9.7A 100V 3.8W 0.20Ω
Parameters
Open channel resistance: 200mOhm
Max. drain current: 9,7A
Max. power loss: 48W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF520N RoHS Case style: TO220  
In stock:
130 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,0401 0,7641 0,6132 0,5259 0,4953
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Packaging:
50/750
Manufacturer:: Infineon Manufacturer part number: IRF520NPBF Case style: TO220  
External warehouse:
800 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 0,4953
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF520NPBF Case style: TO220  
External warehouse:
10320 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,4953
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF520NPBF Case style: TO220  
External warehouse:
19726 pcs.
Quantity of pcs. 600+ (Please wait for the order confirmation)
Net price (EUR) 0,4953
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 200mOhm
Max. drain current: 9,7A
Max. power loss: 48W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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