IRF530N

Symbol Micros: TIRF530N VBS
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Case : TO220
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TO-220AB MOSFETs ROHS IRF530NPBF; IRF530N-VB; IRF530NPBF-VB;
Parameters
Open channel resistance: 0,127Ohm
Max. drain current: 18A
Max. power loss: 105W
Case: TO220
Manufacturer: VBsemi
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 0,127Ohm
Max. drain current: 18A
Max. power loss: 105W
Case: TO220
Manufacturer: VBsemi
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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