IRF640N

Symbol Micros: TIRF640n
Contractor Symbol:
Case : TO220
N-MOSFET 18A 200V 150W 0.15Ω
Parameters
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF640N RoHS Case style: TO220 Datasheet
In stock:
88 pcs.
Quantity of pcs. 1+ 5+ 50+ 200+ 350+
Net price (EUR) 1,0219 0,6767 0,5214 0,4936 0,4866
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Packaging:
50
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT