IRF640N

Symbol Micros: TIRF640n
Contractor Symbol:
Case : TO220
N-MOSFET 18A 200V 150W 0.15Ω
Parameters
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF640NPBF RoHS Case style: TO220 Datasheet
In stock:
200 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,7491 0,4702 0,3686 0,3474 0,3261
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Packaging:
50/400
Manufacturer:: Infineon Manufacturer part number: IRF 640 N PBF Case style: TO220  
External warehouse:
340 pcs.
Quantity of pcs. 1+ (Please wait for the order confirmation)
Net price (EUR) 0,3261
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF640NPBF Case style: TO220  
External warehouse:
845 pcs.
Quantity of pcs. 50+ (Please wait for the order confirmation)
Net price (EUR) 0,3261
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF640NPBF Case style: TO220  
External warehouse:
33300 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,3261
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
         
 
Item in delivery
Estimated date:
2026-04-24
Quantity of pcs.: 200
         
 
Item in delivery
Estimated date:
2026-06-30
Quantity of pcs.: 1000
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT