IRFB3006

Symbol Micros: TIRFB3006

46283

TIRFB3006

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET HEXFET 195A 60V 375W 0.0025Ω

Parameters

Open channel resistance:	2,5mOhm
Max. drain current:	270A
Max. power loss:	375W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: IRFB3006PBF Case style: TO220  

External warehouse:

200 pcs.

Quantity of pcs.	10+ (Please wait for the order confirmation)
Net price (EUR)	1,7442

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Packaging:
10

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

         

 

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Item in delivery

Estimated date:
2026-11-27

Quantity of pcs.: 100

• Parameters

Open channel resistance:	2,5mOhm
Max. drain current:	270A
Max. power loss:	375W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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