IRFB3306

Symbol Micros: TIRFB3306
Contractor Symbol:
Case : TO220
N-MOSFET HEXFET 120A 60V 230W 0.0042Ω
Parameters
Open channel resistance: 4,2mOhm
Max. drain current: 160A
Max. power loss: 230W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRFB3306PBF RoHS Case style: TO220  
In stock:
1500 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,2006 0,9174 0,7583 0,6647 0,6319
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Packaging:
50
Manufacturer:: Infineon Manufacturer part number: IRFB3306PBF Case style: TO220  
External warehouse:
1800 pcs.
Quantity of pcs. 50+ (Please wait for the order confirmation)
Net price (EUR) 0,6319
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFB3306PBF Case style: TO220  
External warehouse:
700 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 0,7792
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 4,2mOhm
Max. drain current: 160A
Max. power loss: 230W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT