IRFB3306

Symbol Micros: TIRFB3306

46284

TIRFB3306

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET HEXFET 120A 60V 230W 0.0042Ω

Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	160A
Max. power loss:	230W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	160A
Max. power loss:	230W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.