IRFB3306

Symbol Micros: TIRFB3306
Contractor Symbol:
Case : TO220
N-MOSFET HEXFET 120A 60V 230W 0.0042Ω
Parameters
Open channel resistance: 4,2mOhm
Max. drain current: 160A
Max. power loss: 230W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Max. gate-source Voltage: 20V
Manufacturer:: Infineon Manufacturer part number: IRFB3306PBF RoHS Case style: TO220  
In stock:
40 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,0886 0,8319 0,6876 0,6028 0,5730
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Packaging:
50
Manufacturer:: Infineon Manufacturer part number: IRFB3306PBF Case style: TO220  
External warehouse:
970 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 0,8350
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFB3306PBF Case style: TO220  
External warehouse:
32133 pcs.
Quantity of pcs. 300+ (Please wait for the order confirmation)
Net price (EUR) 0,5730
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
         
 
Item in delivery
Estimated date:
2026-11-15
Quantity of pcs.: 1000
Open channel resistance: 4,2mOhm
Max. drain current: 160A
Max. power loss: 230W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: THT