IRFB3306

Symbol Micros: TIRFB3306

46284

TIRFB3306

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET HEXFET 120A 60V 230W 0.0042Ω

Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	160A
Max. power loss:	230W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRFB3306PBF RoHS Case style: TO220  

In stock:

1500 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2034	0,9196	0,7600	0,6662	0,6334

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRFB3306PBF Case style: TO220  

External warehouse:

710 pcs.

Quantity of pcs.	10+ (Please wait for the order confirmation)
Net price (EUR)	0,7754

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Packaging:
10

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	160A
Max. power loss:	230W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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