IRFB3306

Micros part number: TIRFB3306
Package: TO220
N-MOSFET HEXFET 120A 60V 230W 0.0042Ω
Parameters
Open channel resistance: 4,2mOhm
Max. drain current: 160A
Max. power loss: 230W
Housing: TO220
Max. drain-source voltage: 60V
Producer: Infineon (IRF)
Transistor type: N-MOSFET
         
 
Pozycja dostępna na zamówienie
         
 
Item in delivery
Planowany termin:
2023-12-31
Quantity of pieces: 200
Open channel resistance: 4,2mOhm
Max. drain current: 160A
Max. power loss: 230W
Housing: TO220
Max. drain-source voltage: 60V
Producer: Infineon (IRF)
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Montage: THT