IRFB3306
Symbol Micros:
TIRFB3306
Case : TO220
N-MOSFET HEXFET 120A 60V 230W 0.0042Ω
Parameters
Open channel resistance: | 4,2mOhm |
Max. drain current: | 160A |
Max. power loss: | 230W |
Case: | TO220 |
Manufacturer: | Infineon (IRF) |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Open channel resistance: | 4,2mOhm |
Max. drain current: | 160A |
Max. power loss: | 230W |
Case: | TO220 |
Manufacturer: | Infineon (IRF) |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | THT |
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