IRFD210

Symbol Micros: TIRFD210
Contractor Symbol:
Case : PDIP04HVMDIP
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N-MOSFET 0.6A 200V 1W 1.5Ω
Parameters
Open channel resistance: 1,5Ohm
Max. drain current: 600mA
Max. power loss: 1W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRFD210 RoHS Case style: PDIP04HVMDIP  
In stock:
100 pcs.
Quantity of pcs. 2+ 15+ 100+ 300+ 1000+
Net price (EUR) 0,5811 0,3220 0,2544 0,2404 0,2320
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Packaging:
100
Open channel resistance: 1,5Ohm
Max. drain current: 600mA
Max. power loss: 1W
Case: PDIP04HVMDIP
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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