IRFP4668PBF

Symbol Micros: TIRFP4668
Contractor Symbol:
Case : TO247AC
Tranzystor N-MOSFET; 200V; 30V; 9,7mOhm; 130A; 520W; -55°C ~ 175°C; Odpowiednik: IRFP4668PBF; IRFP4668PBFXKMA1; IRFP4668;
Parameters
Open channel resistance: 9,7mOhm
Max. drain current: 130A
Max. power loss: 520W
Case: TO247AC
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRFP4668PBF RoHS Case style: TO247AC Datasheet
In stock:
290 pcs.
Quantity of pcs. 1+ 5+ 25+ 100+ 200+
Net price (EUR) 2,6819 2,2096 2,0108 1,9360 1,9150
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Packaging:
25
Manufacturer:: Infineon Manufacturer part number: IRFP4668PBF Case style: TO247AC  
External warehouse:
4175 pcs.
Quantity of pcs. 25+ (Please wait for the order confirmation)
Net price (EUR) 1,9150
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFP4668PBFXKMA1 Case style: TO247AC  
External warehouse:
480 pcs.
Quantity of pcs. 5+ (Please wait for the order confirmation)
Net price (EUR) 2,3743
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Packaging:
5
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFP4668PBFXKMA1 Case style: TO247AC  
External warehouse:
225 pcs.
Quantity of pcs. 25+ (Please wait for the order confirmation)
Net price (EUR) 1,9150
Add to comparison tool
Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 9,7mOhm
Max. drain current: 130A
Max. power loss: 520W
Case: TO247AC
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT