IRFR1018E

Symbol Micros: TIRFR1018e
Contractor Symbol:
Case : TO252
N-MOSFET HEXFET 79A 60V 110W 0.0084Ω
Parameters
Open channel resistance: 8,4mOhm
Max. drain current: 79A
Max. power loss: 110W
Case: TO252
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRFR1018ETRPBF Case style: TO252  
External warehouse:
3500 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4925
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFR1018ETRPBF Case style: TO252  
External warehouse:
54000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4146
Add to comparison tool
Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 8,4mOhm
Max. drain current: 79A
Max. power loss: 110W
Case: TO252
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD