IRFR1018E
Symbol Micros:
TIRFR1018e
Case : TO252
N-MOSFET HEXFET 79A 60V 110W 0.0084Ω
Parameters
Open channel resistance: | 8,4mOhm |
Max. drain current: | 79A |
Max. power loss: | 110W |
Case: | TO252 |
Manufacturer: | International Rectifier |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRFR1018ETRPBF
Case style: TO252
External warehouse:
3500 pcs.
Quantity of pcs. | 50+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,4925 |
Manufacturer:: Infineon
Manufacturer part number: IRFR1018ETRPBF
Case style: TO252
External warehouse:
54000 pcs.
Quantity of pcs. | 2000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,4146 |
Open channel resistance: | 8,4mOhm |
Max. drain current: | 79A |
Max. power loss: | 110W |
Case: | TO252 |
Manufacturer: | International Rectifier |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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