IRFR1018E

Symbol Micros: TIRFR1018e
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Case : TO252
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N-MOSFET HEXFET 79A 60V 110W 0.0084Ω
Parameters
Open channel resistance: 8,4mOhm
Max. drain current: 79A
Max. power loss: 110W
Case: TO252
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 8,4mOhm
Max. drain current: 79A
Max. power loss: 110W
Case: TO252
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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