IRFR1018E

Symbol Micros: TIRFR1018e

42986

TIRFR1018e

Contractor Symbol:

Case : TO252

Datasheet

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N-MOSFET HEXFET 79A 60V 110W 0.0084Ω

Parameters

Open channel resistance:	8,4mOhm
Max. drain current:	79A
Max. power loss:	110W
Case:	TO252
Manufacturer:	International Rectifier
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRFR1018ETRPBF Case style: TO252  

External warehouse:

3500 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4925

Add to comparison tool Add inquiry (RFQ)

Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: IRFR1018ETRPBF Case style: TO252  

External warehouse:

54000 pcs.

Quantity of pcs.	2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4146

Add to comparison tool Add inquiry (RFQ)

Packaging:
2000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	8,4mOhm
Max. drain current:	79A
Max. power loss:	110W
Case:	TO252
Manufacturer:	International Rectifier
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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