IRFR1205

Symbol Micros: TIRFR1205
Contractor Symbol:
Case : TO252
N-MOSFET HEXFET 44A 55V 107W 0.027Ω
Parameters
Open channel resistance: 27mOhm
Max. drain current: 44A
Max. power loss: 107W
Case: TO252
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Max. gate-source Voltage: 20V
Manufacturer:: International Rectifier Manufacturer part number: IRFR1205 RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
8 pcs.
Quantity of pcs. 2+ 10+ 43+ 172+ 731+
Net price (EUR) 0,9232 0,5839 0,4662 0,4224 0,4016
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Packaging:
43
Manufacturer:: International Rectifier Manufacturer part number: IRFR1205 RoHS Case style: TO252t/r Datasheet
In stock:
500 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 500+
Net price (EUR) 0,8378 0,5285 0,4154 0,3762 0,3647
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Packaging:
500
Manufacturer:: Infineon Manufacturer part number: IRFR1205TRPBF Case style: TO252  
External warehouse:
17450 pcs.
Quantity of pcs. 50+ (Please wait for the order confirmation)
Net price (EUR) 0,4016
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRFR1205TRPBF Case style: TO252  
External warehouse:
44000 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,4016
Add to comparison tool
Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 27mOhm
Max. drain current: 44A
Max. power loss: 107W
Case: TO252
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD