IRFR1205

Symbol Micros: TIRFR1205
Contractor Symbol:
Case : TO252
N-MOSFET HEXFET 44A 55V 107W 0.027Ω
Parameters
Open channel resistance: 27mOhm
Max. drain current: 44A
Max. power loss: 107W
Case: TO252
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRFR1205 RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
33 pcs.
Quantity of pcs. 2+ 10+ 43+ 172+ 731+
Net price (EUR) 0,9261 0,5858 0,4677 0,4237 0,4029
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Packaging:
43
Manufacturer:: International Rectifier Manufacturer part number: IRFR1205 RoHS Case style: TO252t/r Datasheet
In stock:
500 pcs.
Quantity of pcs. 2+ 10+ 43+ 172+ 731+
Net price (EUR) 0,9261 0,5858 0,4677 0,4237 0,4029
Add to comparison tool
Packaging:
500
Open channel resistance: 27mOhm
Max. drain current: 44A
Max. power loss: 107W
Case: TO252
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD