IRFR5305TR

Symbol Micros: TIRFR5305
Contractor Symbol:
Case : TO252 (DPACK)
Technical drawing Add to favourites
Transistor P-MOSFET; 55V; 20V; 65mOhm; 31A; 110W; -55°C ~ 175°C; Equivalent: IRFR5305TRPBF; IRFR5305PBF; IRFR5305TRLPBF; IRFR5305PBF-GURT; IRFR5
Parameters
Open channel resistance: 65mOhm
Max. drain current: 31A
Max. power loss: 110W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRFR5305TR RoHS Case style: TO252 (DPACK) t/r  
In stock:
61015 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,7595 0,4802 0,3786 0,3463 0,3301
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Packaging:
2000
Manufacturer:: Infineon Manufacturer part number: IRFR5305 RoHS Case style: TO252 (DPACK)  
In stock:
0 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,7595 0,4802 0,3786 0,3463 0,3301
Add to comparison tool
Packaging:
75/1275
Manufacturer:: Infineon Manufacturer part number: IRFR5305TR RoHS Case style: TO252 (DPACK) t/r  
In stock:
33000 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,7595 0,4802 0,3786 0,3463 0,3301
Add to comparison tool
Packaging:
3000
Open channel resistance: 65mOhm
Max. drain current: 31A
Max. power loss: 110W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 55V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD
Detailed description

Manufacturer: International Rectifier
Transistor type: P-MOSFET
Polarisation: unipolar
Transistor kind: HEXFET
Drain-source voltage: -55V
Drain current: -28A
Power: 89W
Case: TO252 (DPACK)
Gate-source voltage: 20V
On-state resistance: 65mΩ
Junction-to-case thermal resistance: 1.4K/W
Mounting: SMD

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