IRFZ34NS

Micros part number: TIRFZ34ns
Package: TO263 (D2PAK)
N-MOSFET 28A 55V 3,8W
Parameters
Open channel resistance: 40mOhm
Max. drain current: 29A
Max. power loss: 68W
Housing: TO263 (D2PAK)
Max. drain-source voltage: 55V
Producer: Infineon (IRF)
Transistor type: N-MOSFET
         
 
Pozycja dostępna na zamówienie
Open channel resistance: 40mOhm
Max. drain current: 29A
Max. power loss: 68W
Housing: TO263 (D2PAK)
Max. drain-source voltage: 55V
Producer: Infineon (IRF)
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Montage: SMD