IRLR3636 IRLR3636PBF-GURT

Symbol Micros: TIRLR3636
Contractor Symbol:
Case : TO252 (DPACK)
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N-MOSFET 50A 60V 143W 0.068Ω IRLR3636PBF IRLR3636TRPBF (2000/T&R) IRLR3636TRLPBF (3K/RL) IRLR3636PBF-GURT
Parameters
Open channel resistance: 8,3mOhm
Max. drain current: 99A
Max. power loss: 143W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRLR3636TR RoHS Case style: TO252 (DPACK) t/r  
In stock:
1690 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 1,5504 1,2290 1,0461 0,9617 0,9124
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Packaging:
2000
Open channel resistance: 8,3mOhm
Max. drain current: 99A
Max. power loss: 143W
Case: TO252 (DPACK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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