IRLR3636 IRLR3636PBF-GURT
Symbol Micros:
TIRLR3636
Case : TO252 (DPAK)
N-MOSFET 50A 60V 143W 0.068Ω IRLR3636PBF IRLR3636TRPBF (2000/T&R) IRLR3636TRLPBF (3K/RL) IRLR3636PBF-GURT; PGD06N026M;
Parameters
| Open channel resistance: | 8,3mOhm |
| Max. drain current: | 99A |
| Max. power loss: | 143W |
| Case: | TO252 (DPACK) |
| Manufacturer: | Infineon (IRF) |
| Max. drain-source voltage: | 60V |
| Max. gate-source Voltage: | 16V |
Manufacturer:: Infineon
Manufacturer part number: IRLR3636TR RoHS
Case style: TO252 (DPACK) t/r
In stock:
1400 pcs.
| Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 500+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,8600 | 0,5710 | 0,4732 | 0,4277 | 0,4095 |
| Open channel resistance: | 8,3mOhm |
| Max. drain current: | 99A |
| Max. power loss: | 143W |
| Case: | TO252 (DPACK) |
| Manufacturer: | Infineon (IRF) |
| Max. drain-source voltage: | 60V |
| Max. gate-source Voltage: | 16V |
| Transistor type: | N-MOSFET |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
Equivalents
Manufacturer::
HXY MOSFET
Manufacturer part number:
IRLR3636PBF RoHS
Case style:
TO252 (DPACK) t/r
In stock
98 pcs.
| Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 500+ |
| Net price (EUR) | 0,9510 | 0,6325 | 0,5233 | 0,4709 | 0,4527 |
Packaging: 100
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