TLP291 SOIC04    TLP291(TP,SE(T

Symbol Micros: OOTLP291
Contractor Symbol:
Case : SOIC04
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pojedynczy CTR 100-600% Vce 80V Uiso 3,75kV Transistor ; Rank CTR GB : 100~300; TLP291(E(O; TLP291-E-O; TLP291(TP,E(O; TLP291(GB,E(O; TLP291(GB-TP,E(O; TLP291(GR,SE(T; TLP291-GR.SE-T; T&R TLP291GB-TP.SE; CYTLP291(GB-TP); TLP291-GB-TP.E-O; TLP291(GB-TP.E(O; TLP291GB-TP,SE(T;
Parameters
CTR: 100-600%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage [V]: 80V
Manufacturer:: Toshiba Manufacturer part number: TLP291(GR-TP,SE(T RoHS Case style: SOIC04t/r Datasheet
In stock:
875 pcs.
Quantity of pcs. 3+ 20+ 100+ 500+ 2500+
Net price (EUR) 0,3123 0,1676 0,1305 0,1182 0,1140
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Packaging:
875
Manufacturer:: Toshiba Manufacturer part number: TLP291(GR-TP,SE(T RoHS Case style: SOIC04t/r Datasheet
In stock:
7500 pcs.
Quantity of pcs. 3+ 20+ 100+ 500+ 2500+
Net price (EUR) 0,3123 0,1676 0,1305 0,1182 0,1140
Add to comparison tool
Packaging:
2500
Manufacturer:: Toshiba Manufacturer part number: TLP291(GB-TP,SE RoHS Case style: SOIC04t/r Datasheet
In stock:
730 pcs.
Quantity of pcs. 3+ 20+ 100+ 500+ 2500+
Net price (EUR) 0,3123 0,1676 0,1305 0,1182 0,1140
Add to comparison tool
Packaging:
1000
CTR: 100-600%
Case: SOIC04
Output type: NPN Phototransistor
Insulation breakdown voltage: 3750V
Output voltage [V]: 80V

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