MJD45H11T4

Symbol Micros: TMJD45h11t4
Contractor Symbol:
Case : DPAK
Trans GP BJT PNP 80V 8A 20000mW 3-Pin(2+Tab) DPAK MJD45H11T4G
Parameters
Power dissipation: 1,75W
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 60
Cutoff frequency: 90MHz
Case: DPAK
Max. collector current: 8A
Max collector-emmiter voltage: 80V
Manufacturer:: ON-Semicoductor Manufacturer part number: MJD45H11T4G RoHS Case style: DPAK t/r Datasheet
In stock:
1280 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,6986 0,4422 0,3481 0,3175 0,3034
Add to comparison tool
Packaging:
2500
Manufacturer:: ST Manufacturer part number: MJD45H11T4 Case style: DPAK  
External warehouse:
2500 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3034
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: MJD45H11T4G Case style: DPAK  
External warehouse:
232500 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3034
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: MJD45H11T4G Case style: DPAK  
External warehouse:
515000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3034
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 1,75W
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 60
Cutoff frequency: 90MHz
Case: DPAK
Max. collector current: 8A
Max collector-emmiter voltage: 80V
Operating temperature (range): -55°C ~ 150°C
Transistor type: PNP