MJD45H11T4

Symbol Micros: TMJD45h11t4

125161

TMJD45h11t4

Contractor Symbol:

Case : DPAK

Datasheet

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Trans GP BJT PNP 80V 8A 20000mW 3-Pin(2+Tab) DPAK MJD45H11T4G

Parameters

Power dissipation:	1,75W
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	60
Case:	DPAK
Cutoff frequency:	90MHz
Max. collector current:	8A
Max collector-emmiter voltage:	80V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: MJD45H11T4G RoHS Case style: DPAK t/r Datasheet

In stock:

1280 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5257	0,3192	0,2441	0,2208	0,2100

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Packaging:
2500 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: MJD45H11T4G Case style: DPAK  

External warehouse:

710000 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,2100

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	1,75W
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	60
Case:	DPAK
Cutoff frequency:	90MHz
Max. collector current:	8A
Max collector-emmiter voltage:	80V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	PNP

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