MJD45H11T4

Symbol Micros: TMJD45h11t4

125161

TMJD45h11t4

Contractor Symbol:

Case : DPAK

Datasheet

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Trans GP BJT PNP 80V 8A 20000mW 3-Pin(2+Tab) DPAK MJD45H11T4G

Parameters

Power dissipation:	1,75W
Manufacturer:	ON SEMICONDUCTOR
Case:	DPAK
Current gain factor:	60
Cutoff frequency:	90MHz
Max. collector current:	8A
Max collector-emmiter voltage:	80V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: MJD45H11T4G RoHS Case style: DPAK t/r Datasheet

In stock:

2000 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5827	0,3519	0,2704	0,2447	0,2326

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Packaging:
2500 Quantity (multiple: 1)

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• Parameters

Power dissipation:	1,75W
Manufacturer:	ON SEMICONDUCTOR
Case:	DPAK
Current gain factor:	60
Cutoff frequency:	90MHz
Max. collector current:	8A
Max collector-emmiter voltage:	80V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	PNP

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