NDT70N06 TO252 KEXIN

Symbol Micros: TNDT70N06 KEX

533987

TNDT70N06 KEX

Contractor Symbol:

Case : TO252

Datasheet

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Transistor N-MOSFET; 60V; 20V; 6,6mOhm; 88A; 111W; -55°C ~ 175°C; Similar to: SUD50N06-09L-E3; PTD50N06; LGE50N06D;

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Parameters

Open channel resistance:	6,6mOhm
Max. power loss:	111W
Max. drain current:	88A
Case:	TO252
Manufacturer:	KEXIN
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	6,6mOhm
Max. power loss:	111W
Max. drain current:	88A
Case:	TO252
Manufacturer:	KEXIN
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

Equivalents

SUD50N06-09L-E3 Vishay

Symbol Micros: SUD50N06-09L-E3 Vishay Info Add to favourites Equivalents

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LGE50N06D TO252 LGE

Symbol Micros: LGE50N06D TO252 LGE Info Technical drawing Add to favourites Equivalents

Manufacturer::

LGE

Manufacturer part number:

LGE50N06D RoHS

Case style:

TO252t/r

In stock

500 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,2682	0,1476	0,0977	0,0814	0,0765

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Packaging: 500

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