NTD5867N

Symbol Micros: TNTD5867n c
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Case : TO252
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Transistor N-MOSFET; 60V; 20V; 33mOhm; 20A; 50W; -55°C~150°C; Substitute: NTD5867NLT4G; NTD5867NL-VB; NTD5867NLT4G-VB; NTD5867NLT4G;
Parameters
Open channel resistance: 33mOhm
Max. drain current: 20A
Max. power loss: 50W
Case: TO252
Manufacturer: TECH PUBLIC
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: TECH PUBLIC Manufacturer part number: NTD5867NLT4G RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
150 pcs.
Quantity of pcs. 2+ 10+ 40+ 150+ 300+
Net price (EUR) 0,7449 0,4650 0,3725 0,3331 0,3239
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Packaging:
150
Open channel resistance: 33mOhm
Max. drain current: 20A
Max. power loss: 50W
Case: TO252
Manufacturer: TECH PUBLIC
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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