SI2308BDS
Symbol Micros:
TSI2308bds c
Case : SOT23
Transistor N-Channel MOSFET; 60V; 20V; 105mOhm; 3A; 350mW; -55°C~150°C; Substitute: SI2308BDS-VB; SI2308BDS-T1-E3; SI2308BDS-T1-BE3; SI2308BDS-T1-GE3; SI2308BDS-T1-GE3-VB;
Parameters
| Open channel resistance: | 105mOhm |
| Max. drain current: | 3A |
| Max. power loss: | 350mW |
| Case: | SOT23 |
| Manufacturer: | TECH PUBLIC |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 105mOhm |
| Max. drain current: | 3A |
| Max. power loss: | 350mW |
| Case: | SOT23 |
| Manufacturer: | TECH PUBLIC |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
Equivalents
Item available on request
Item available on request
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