TPH4R606NH,L1Q Toshiba

Symbol Micros: TTPH4r606nh

118304

TTPH4r606nh

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

N-MOSFET 60V 32A 1.6W 4.6mΩ

Parameters

Open channel resistance:	11mOhm
Max. drain current:	32A
Max. power loss:	63W
Case:	SOP08
Manufacturer:	TOSHIBA
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Toshiba Manufacturer part number: TPH4R606NH,L1Q RoHS Case style: SOP08t/r Datasheet

In stock:

91 pcs.

Quantity of pcs.	1+	5+	30+	150+	300+
Net price (EUR)	1,0969	0,7274	0,5791	0,5320	0,5226

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Packaging:
150 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	11mOhm
Max. drain current:	32A
Max. power loss:	63W
Case:	SOP08
Manufacturer:	TOSHIBA
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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