TSC966CW RPG

Symbol Micros: TTSC966cw

219634

TTSC966cw

Contractor Symbol:

Case : SOT223

Datasheet

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NPN 400V 0,3A 1,0W B>90 SOT223 TSC966CW ; TSC966CW RPG ;

Parameters

Power dissipation:	1W
Manufacturer:	Taiwan Semiconductor
Case:	SOT23
Current gain factor:	300
Cutoff frequency:	50MHz
Max. collector current:	300mA
Max collector-emmiter voltage:	600V

All parameters

         

 

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• Parameters

Power dissipation:	1W
Manufacturer:	Taiwan Semiconductor
Case:	SOT23
Current gain factor:	300
Cutoff frequency:	50MHz
Max. collector current:	300mA
Max collector-emmiter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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