TSM1NB60CP ROG

Symbol Micros: TTSM1nb60cp

123964

TTSM1nb60cp

Contractor Symbol:

Case : DPAK

Datasheet

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Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK

Parameters

Open channel resistance:	10Ohm
Max. drain current:	1A
Max. power loss:	39W
Case:	DPAK
Manufacturer:	TAI-SEM
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM1NB60CP RoHS Case style: DPAK t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,4471	0,2458	0,1936	0,1791	0,1718

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM1NB60CP ROG Case style: DPAK  

External warehouse:

15000 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1718

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM1NB60CP ROG Case style: DPAK  

External warehouse:

7500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2269

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM1NB60CP ROG Case style: DPAK  

External warehouse:

8350 pcs.

Quantity of pcs.	25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2364

Add to comparison tool Add inquiry (RFQ)

Packaging:
25

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	10Ohm
Max. drain current:	1A
Max. power loss:	39W
Case:	DPAK
Manufacturer:	TAI-SEM
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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