ZXMN10B08E6

Micros part number: TZXMN10b08e6
Package: SOT23-6
N-MOSFET 1.6A 100V 1.1W 0.23Ω
Parameters
Open channel resistance: 500mOhm
Max. drain current: 1,9A
Max. power loss: 1,7W
Housing: SOT23-6
Max. drain-source voltage: 100V
Producer: DIODES
Transistor type: N-MOSFET
Manufacturer:: DIODES/ZETEX Manufacturer part number: ZXMN10B08E6TA Pbf 10B8 Package: SOT23-6/t/r  
In stock:
63 pcs.
Quantity 2+ 10+ 50+ 200+ 500+
Net price (PLN) 2,2200 1,3400 1,0200 0,9210 0,8890
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Standard packaging:
500
Manufacturer:: DIODES/ZETEX Manufacturer part number: ZXMN10B08E6TA .10B8 RoHS Package: SOT23-6/t/r  
In stock:
3000 pcs.
Quantity 2+ 10+ 50+ 200+ 1000+
Net price (PLN) 2,2200 1,3500 1,0400 0,9340 0,8890
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Standard packaging:
3000
Open channel resistance: 500mOhm
Max. drain current: 1,9A
Max. power loss: 1,7W
Housing: SOT23-6
Max. drain-source voltage: 100V
Producer: DIODES
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Montage: SMD