ZXMN10B08E6

Symbol Micros: TZXMN10b08e6

52191

TZXMN10b08e6

Contractor Symbol:

Case : SOT23-6

Datasheet

Technical drawing Add to favourites

N-MOSFET 1.6A 100V 1.1W 0.23Ω

Parameters

Open channel resistance:	500mOhm
Max. drain current:	1,9A
Max. power loss:	1,7W
Case:	SOT23-6
Manufacturer:	DIODES
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: DIODES/ZETEX Manufacturer part number: ZXMN10B08E6TA Pbf 10B8 Case style: SOT23-6/t/r Datasheet

In stock:

36 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,5596	0,3518	0,2762	0,2503	0,2432

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Packaging:
500 Quantity (multiple: 1)

- +

Manufacturer:: DIODES/ZETEX Manufacturer part number: ZXMN10B08E6QTA Case style: SOT23-6  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,2507

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	500mOhm
Max. drain current:	1,9A
Max. power loss:	1,7W
Case:	SOT23-6
Manufacturer:	DIODES
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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