ZXMN10B08E6

Symbol Micros: TZXMN10b08e6
Contractor Symbol:
Case : SOT23-6
Technical drawing Add to favourites
N-MOSFET 1.6A 100V 1.1W 0.23Ω
Parameters
Open channel resistance: 500mOhm
Max. drain current: 1,9A
Max. power loss: 1,7W
Case: SOT23-6
Manufacturer: DIODES
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: DIODES/ZETEX Manufacturer part number: ZXMN10B08E6TA Pbf 10B8 Case style: SOT23-6/t/r Datasheet
In stock:
36 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,6135 0,3889 0,3056 0,2778 0,2662
Add to comparison tool
Packaging:
500
Manufacturer:: DIODES/ZETEX Manufacturer part number: ZXMN10B08E6TA .10B8 RoHS Case style: SOT23-6/t/r Datasheet
In stock:
0 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,6135 0,3889 0,3056 0,2778 0,2662
Add to comparison tool
Packaging:
3000
Open channel resistance: 500mOhm
Max. drain current: 1,9A
Max. power loss: 1,7W
Case: SOT23-6
Manufacturer: DIODES
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols