BSS138LT1G smd

Symbol Micros: TBSS138LT1G
Contractor Symbol:
Case : SOT23
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N-MOSFET 200mA 50V 360mW 3.5Ω BSS138L BSS138 BSS138TA BSS138LT3G BSS138-YAN BSS138-TP [BSS138LT7G(2.75V,5V)]
Parameters
Open channel resistance: 10Ohm
Max. drain current: 200mA
Max. power loss: 225mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 50V
Max. gate-source Voltage: 20V
         
 
Item available on request
         
 
Item in delivery
Estimated date:
2027-05-07
Quantity of pcs.: 60000
Open channel resistance: 10Ohm
Max. drain current: 200mA
Max. power loss: 225mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 50V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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