FDD8896 HXY MOSFET

Symbol Micros: TFDD8896 HXY
Contractor Symbol:
Case : TO252 (DPACK)
Transistor N-Channel MOSFET; 30V; 20V; 9mOhm; 80A; 54W; -55°C ~ 150°C; Equivalent: FDD8896 Onsemi;
Parameters
Open channel resistance: 9mOhm
Max. drain current: 80A
Max. power loss: 54W
Case: TO252 (DPACK)
Manufacturer: HXY MOSFET
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: FDD8896 RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
300 pcs.
Quantity of pcs. 3+ 10+ 50+ 300+ 1500+
Net price (EUR) 0,3796 0,2499 0,1794 0,1537 0,1462
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Packaging:
300
Open channel resistance: 9mOhm
Max. drain current: 80A
Max. power loss: 54W
Case: TO252 (DPACK)
Manufacturer: HXY MOSFET
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD