FDD8896 HXY MOSFET
Symbol Micros:
TFDD8896 HXY
Case : TO252 (DPACK)
Transistor N-Channel MOSFET; 30V; 20V; 9mOhm; 80A; 54W; -55°C ~ 150°C; Equivalent: FDD8896 Onsemi;
Parameters
Open channel resistance: | 9mOhm |
Max. drain current: | 80A |
Max. power loss: | 54W |
Case: | TO252 (DPACK) |
Manufacturer: | HXY MOSFET |
Max. drain-source voltage: | 30V |
Transistor type: | N-MOSFET |
Open channel resistance: | 9mOhm |
Max. drain current: | 80A |
Max. power loss: | 54W |
Case: | TO252 (DPACK) |
Manufacturer: | HXY MOSFET |
Max. drain-source voltage: | 30V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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