FDD8896

Symbol Micros: TFDD8896 VBS

Case : TO252

Transistor N-Channel MOSFET; 30V; +/-20V; 2,1Ohm; 12A; 165W; -55°C~175°C; Substitute: FDD8896-VB; YFW100N03AD;

Parameters

Manufacturer:: VBsemi Manufacturer part number: FDD8896-VB RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

496 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8439	0,5353	0,4231	0,3834	0,3670

Manufacturer:: VBsemi Manufacturer part number: FDD8896-VB RoHS Case style: TO252t/r Datasheet

In stock:

300 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8439	0,5353	0,4231	0,3834	0,3670

Manufacturer:: VBsemi Manufacturer part number: FDD8896 RoHS Case style: TO252t/r Datasheet

In stock:

80 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8439	0,5353	0,4231	0,3834	0,3670

Item in delivery

Estimated date:
2025-05-05

Quantity of pcs.: 5000

Open channel resistance:	2,1Ohm
Max. drain current:	12A
Max. power loss:	165W
Case:	TO252
Manufacturer:	VBS
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6195	0,3881	0,3226	0,2875	0,2688

Quantity of pcs.	3+	10+	40+	150+	600+
Net price (EUR)	0,3927	0,2571	0,1889	0,1625	0,1512