FDD8896

Symbol Micros: TFDD8896 VBS

Case : TO252

Transistor N-Channel MOSFET; 30V; +/-20V; 2,1Ohm; 12A; 165W; -55°C~175°C; Substitute: FDD8896-VB; YFW100N03AD;

Parameters

Manufacturer:: VBsemi Manufacturer part number: FDD8896-VB RoHS Case style: TO252t/r Datasheet

In stock:

600 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,7039	0,4456	0,3508	0,3200	0,3057

Manufacturer:: VBsemi Manufacturer part number: FDD8896 RoHS Case style: TO252t/r Datasheet

In stock:

66 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,7039	0,4456	0,3508	0,3200	0,3057

Item in delivery

Estimated date:
2026-01-10

Quantity of pcs.: 2500

Open channel resistance:	2,1Ohm
Max. drain current:	12A
Max. power loss:	165W
Case:	TO252
Manufacturer:	VBS
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,5736	0,3603	0,2986	0,2655	0,2489

Quantity of pcs.	3+	20+	100+	500+	2000+
Net price (EUR)	0,3200	0,1706	0,1327	0,1202	0,1161

Quantity of pcs.	3+	20+	100+	500+	2000+
Net price (EUR)	0,3200	0,1706	0,1327	0,1202	0,1161

Quantity of pcs.	3+	10+	50+	300+	1500+
Net price (EUR)	0,3816	0,2512	0,1804	0,1545	0,1469

Quantity of pcs.	3+	10+	40+	150+	600+
Net price (EUR)	0,4551	0,2963	0,2183	0,1880	0,1749