FDD8896

Symbol Micros: TFDD8896 VBS

Case : TO252

Transistor N-Channel MOSFET; 30V; +/-20V; 2,1Ohm; 12A; 165W; -55°C~175°C; Substitute: FDD8896-VB; YFW100N03AD;

Parameters

Manufacturer:: VBsemi Manufacturer part number: FDD8896-VB RoHS Case style: TO252 Datasheet

In stock:

5000 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6996	0,4428	0,3486	0,3180	0,3039

Manufacturer:: VBsemi Manufacturer part number: FDD8896-VB RoHS Case style: TO252t/r Datasheet

In stock:

666 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6996	0,4428	0,3486	0,3180	0,3039

Item in delivery

Estimated date:
2026-06-30

Quantity of pcs.: 2500

Open channel resistance:	2,1Ohm
Max. power loss:	165W
Max. drain current:	12A
Case:	TO252
Manufacturer:	VBS
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,5700	0,3580	0,2968	0,2638	0,2473

Quantity of pcs.	3+	20+	100+	500+	2000+
Net price (EUR)	0,3180	0,1696	0,1319	0,1194	0,1154

Quantity of pcs.	3+	20+	100+	500+	2000+
Net price (EUR)	0,3180	0,1696	0,1319	0,1194	0,1154

Quantity of pcs.	3+	10+	50+	300+	1500+
Net price (EUR)	0,3792	0,2497	0,1793	0,1536	0,1460

Quantity of pcs.	3+	10+	40+	150+	600+
Net price (EUR)	0,4523	0,2944	0,2169	0,1868	0,1738