FDV303N UMW

Symbol Micros: TFDV303n UMW
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Case : SOT23
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Transistor N-Channel MOSFET; 25V; 8V; 42mOhm; 680mA; 350mW; -55°C ~ 150°C; Equivalent: FDV303N Onsemi;
Parameters
Open channel resistance: 42mOhm
Max. drain current: 680mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: UMW
Max. drain-source voltage: 25V
Transistor type: N-MOSFET
Manufacturer:: UMW Manufacturer part number: FDV303N RoHS Case style: SOT23t/r Datasheet
In stock:
1000 pcs.
Quantity of pcs. 5+ 30+ 200+ 1000+ 5000+
Net price (EUR) 0,1922 0,0770 0,0446 0,0373 0,0350
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Packaging:
1000
Open channel resistance: 42mOhm
Max. drain current: 680mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: UMW
Max. drain-source voltage: 25V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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