TSM2N60SCW RPG

Symbol Micros: TTSM2n60scw
Contractor Symbol:
Case : SOT223
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Trans MOSFET N-CH 600V 0.6A T/R
Parameters
Open channel resistance: 5Ohm
Max. drain current: 600mA
Max. power loss: 2,5W
Case: SOT223
Manufacturer: TAI-SEM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: TAI-SEM Manufacturer part number: TSM2N60SCW RPG RoHS Case style: SOT223t/r Datasheet
In stock:
25 pcs.
Quantity of pcs. 2+ 10+ 25+ 100+ 400+
Net price (EUR) 0,5599 0,3516 0,2984 0,2591 0,2429
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Packaging:
25
Open channel resistance: 5Ohm
Max. drain current: 600mA
Max. power loss: 2,5W
Case: SOT223
Manufacturer: TAI-SEM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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