TSM2N60SCW RPG

Symbol Micros: TTSM2n60scw

123967

TTSM2n60scw

Contractor Symbol:

Case : SOT223

Datasheet

Technical drawing Add to favourites

Trans MOSFET N-CH 600V 0.6A T/R

Parameters

Open channel resistance:	5Ohm
Max. drain current:	600mA
Max. power loss:	2,5W
Case:	SOT223
Manufacturer:	TAI-SEM
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2N60SCW RPG RoHS Case style: SOT223t/r Datasheet

In stock:

25 pcs.

Quantity of pcs.	2+	10+	25+	100+	400+
Net price (EUR)	0,5579	0,3343	0,2801	0,2401	0,2229

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Packaging:
25 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5Ohm
Max. drain current:	600mA
Max. power loss:	2,5W
Case:	SOT223
Manufacturer:	TAI-SEM
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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