Transistors (results: 8519)

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Open channel resistance
Max. drain current
Max. power loss
Case
Manufacturer
Power dissipation
Current gain factor
Cutoff frequency
Gate charge
Max. dissipated power
Max. drain-source voltage
Max. collector current
Max collector-emmiter voltage
Max. collector current
Max collector current (impulse)
Forvard volatge [Vgeth]
Transistor type
Max. drain-gate voltage
Operating temperature (range)
Max. gate-source Voltage
Collector-emitter voltage
Mounting
Gate-emitter voltage
Transistor circuits [Y/N]
BC860B DIOTEC Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin SOT-23 T/R BC860B-DIO
BC860B DIOTEC SOT23-3
 
 
Item available on a request
                                               
BC860C JSMICRO Transistor PNP; 800; 250mW; 45V; 100mA; 100MHz; -55°C ~ 150°C; Equivalent: BC860C,215; BC860C,235; BC860CE6359HTMA1;
BC860C JSMICRO SOT23
  SOT23 JSMICRO 250mW 800 100MHz 100mA 45V PNP -55°C ~ 150°C
 
Item available on a request
                                               
BC860C SOT23 YFW Tranzystor PNP; 800; 250mW; 45V; 100mA; 100MHz; -65°C ~ 150°C;
BC860C SOT23 YFW SOT23
 
 
Item available on a request
                                               
IMZA65R072M1H Trans MOSFET N-CH SiC 650V 28A 4-Pin(4+Tab) TO-247 IMZA65R072M1HXKSA1
IMZA65R072M1H TO247
 
 
Item available on a request
                                               
IPA65R150CFD N-MOSFET 22.4A 650V 34.7W 0.15Ω IPA65R150CFDXKSA1
IPA65R150CFD TO220iso
  351mOhm 22,4A 195,3W TO220iso Infineon Technologies 700V N-MOSFET -55°C ~ 150°C 30V THT
 
Item available on a request
                                               
IPB010N06NATMA1 Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK
IPB010N06NATMA1 D2PAK
 
 
Item available on a request
                                               
IXGH30N60C3D1 60A; 600V; 220W; IGBT
IXGH30N60C3D1 TO247AD
  TO247AD IXYS 38nC 220W 60A 150A 3,0V ~ 5,5V -55°C ~ 150°C 600V THT 20V
 
Item available on a request
                                               
G120P06M Transistor MOSFET; TO-263; P-Channel; NO ESD; -60V; -120A; 277W; -2.5V; 7mΩ IPB110P06LM; IRF9Z34S, SiHF9Z34S
G120P06M TO263
 
 
Item available on a request
                                               
BCP53-16 GALAXY Transistor PNP; 250; 1,5W; 80V; 1A; 125MHz; -55°C ~ 150°C; Equivalent: BCP5316TA; BCP5316TC; BCP53-16,115; BCP53-16,135; BCP53-16T1G; BCP53-16T3G; BCP53-16-TP; BCP5316H6327XTSA1;
BCP53-16 GALAXY SOT223
  SOT223 GALAXY 1,5W 250 125MHz 1A 80V PNP -55°C ~ 150°C
 
Item available on a request
                                               
IPB60R190C6 INFINEON Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK IPB60R190C6ATMA1
IPB60R190C6 INFINEON D2PAK
 
 
Item available on a request
                                               
BCP5516H6327 INFINEON NPN 1A 60V 1.5W 100MHz BCP5516H6327XTSA1
BCP5516H6327 INFINEON SOT223
 
 
Item available on a request
                                               
BCP56 NPN 1000mA 80V 1330mW 130MHz Complementary to BCP51,BCP52,BCP53
BCP56 SOT223
                                                   
Item available on a request
                                                     
Item in delivery
Estimated time: 2025-05-10
Quantity of pieces: 2500
                                               
G80P03K Transistor MOSFET; TO-252; P-Channel; NO ESD; -30V; -80A; 78W; -1.4V; 4.5mΩ; 6mΩ IPD042P03L3G; AOD21357
G80P03K TO252
 
 
Item available on a request
                                               
IPD075N03LG Infineon N-MOSFET 30V 50A 47W 7.5mΩ
IPD075N03LG Infineon TO252/3 (DPAK)
  11,4mOhm 50A 47W TO252/3 (DPAK) Infineon Technologies 30V N-MOSFET -55°C ~ 175°C 20V SMD
 
Item available on a request
                                               
IPD135N03LGATMA1 Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK
IPD135N03LGATMA1 DPAK
 
 
Item available on a request
                                               
IPD50P04P4L11ATMA2 Transistor P-Channel MOSFET; 40V; 10V; 10,6mOhm; 50A; 58W; -55°C~175°C; Replacement: IPD50P04P4L-11; IPD50P04P4L11ATMA1; IPD50P04P4L11ATMA2; IPD50P04P4L11;
IPD50P04P4L11ATMA2 DPAK
  10,6mOhm 50A 58W DPAK INFINEON 40V P-MOSFET -55°C ~ 175°C 10V SMD
 
Item available on a request
                                               
IPD60R280CFD7ATMA1 Transistor N-Channel MOSFET; 650V; 20V; 280mOhm; 9A; 51W; -55°C~150°C;
IPD60R280CFD7ATMA1 TO252/3 (DPAK)
  280mOhm 9A 51W DPAK INFINEON 650V N-MOSFET -55°C ~ 150°C 20V SMD
 
Item available on a request
                                               
BCP69 China PNP -1000mA -20V 625mW 140MHz
BCP69 China SOT223
 
 
Item available on a request
                                               
IPD60R280P7ATMA1 Transistor: N-MOSFET ; unipolarny ; 600V ; 8A ; 53W ; PG-TO252-3 600V CoolMOS P7 Power Transistor
IPD60R280P7ATMA1 DPAK
 
 
Item available on a request
                                               
IPD60R280P7S Infineon Technologies MOSFET N-CH 600V 12A TO252-3 IPD60R280P7SAUMA1
IPD60R280P7S Infineon Technologies TO252
  501mOhm 12A 53W TO252 Infineon Technologies 650V N-MOSFET -40°C ~ 150°C 20V SMD
 
Item available on a request
                                               
IPD60R2K0PFD7S Transistor: N-MOSFET | CoolMOSt PFD7 | unipolarny | 650V | 1,9A | 20W IPD60R2K0PFD7SAUMA1
IPD60R2K0PFD7S DPAK
 
 
Item available on a request
                                               
IPD60R360P7ATMA1 Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK
IPD60R360P7ATMA1 DPAK
 
 
Item available on a request
                                               
IPD65R660CFDATMA2 LOW POWER_LEGACY Transistors - FETs, MOSFETs - Single
IPD65R660CFDATMA2 DPAK
 
 
Item available on a request
                                               
IPD70N10S3L-12 Infineon N-MOSFET 100V 70A 125W 11.5mΩ
IPD70N10S3L-12 Infineon TO252
  15,2mOhm 70A 125W TO252 Infineon Technologies 100V N-MOSFET -55°C ~ 175°C 20V SMD
 
Item available on a request
                                               
IPD70P04P409ATMA1 Trans MOSFET P-CH 40V 73A Automotive 3-Pin(2+Tab) DPAK
IPD70P04P409ATMA1 DPAK
 
 
Item available on a request
                                               
BCR116WH6327 Infineon NPN 50V 100mA 150MHz 250mW BCR116WH6327XTSA1
BCR116WH6327 Infineon SOT323
 
 
Item available on a request
                                               
G60N04D52 Transistor MOSFET; DFN5*6-8L; DUAL; N+N-Channel; NO ESD; 40V; 35A; 20W; 1.8V; 9mΩ; 12mΩ IPG20N04S4L08ATMA1; AON6884
G60N04D52 DFN08(5x6)
 
 
Item available on a request
                                               
IPG20N06S4L11ATMA1 MOSFET 2N-CH 8TDSON Transistors - FETs, MOSFETs - Arrays
IPG20N06S4L11ATMA1  
 
 
Item available on a request
                                               
BCR533 SOT23 Transistor NPN; 70; 330mW; 50V; 500mA; 100MHz; -65°C ~ 150°C; Substitute: BCR533E6327; BCR533E6327HTSA1;
BCR533 SOT23 SOT23
 
 
Item available on a request
                                               
BCV27 China Darlington NPN 500mA 30V 200mW 220MHz
BCV27 China SOT23
 
 
Item available on a request
                                               
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Transistors

Field effect, bipolar and IGBT transistors - all those three types can be found in the Micros store. Get acquainted with the usage of transistors and what are the differences between particular types. Please check why it is worth choosing products offered by us.

What is a transistor and what is it used for?

Transistor is a semiconductor that has the capability of amplifying the electric signal.

The device is characterised by small size, hence it replaced vacuum tubes used before. It is believed that one of the main factors for the electronic development acceleration in the recent decades was introducing transistors to the market. It was possible thanks to the capability of significantly amplifying the signal by using small and not so complicated elements. However, why in fact it turned out to be that important and what are the uses of transistors in present day electronics? Here are few examples:

  • It is the most important part of amplifiers; 
  • It is used as a structural element in semiconductor memory;
  • It takes part in a signal transmission, e.g. in phase shift modules and generators;

Types of transistors

It is hard to answer the question “What are transistors used for?” without explaining what are the differences between them. In Micros offer you will find every transistor that you might need. Our offer includes devices with a variety of applications, because our aim is to meet the needs of every customer. When it comes to transistors, we can distinguish three main types, and dozens of devices from each type can be found in the relevant product category in our store. The three main types are:

  • Field effect transistors
  • Bipolar transistors
  • IGBT transistors

We can assume that the field effect transistors are the most classic version of transistors. This invention is nearly 100 years old, however it is still incredibly useful. FET(Field Effect Transistor) consists of one semiconductor layer and the current is controlled by using the electromagnetic field.

Bipolar transistors, which are also available in our offer, are made up of three semiconductor layers, and each one of them represents a different type of semiconductivity. IGBT transistors on the other hand are a variety of bipolar transistors equipped with additional insulated gate.

Transistors in our offer

Our offer includes transistors with a vast variety of applications. We provide numerous FET models, called unipolar, which are essential parts of integrated circuits or switches. If you need parts for current amplifiers, choose our bipolar transistors. Moreover, essential parts for photovoltaic installations can be found in the “IGBT Transistors” category.

Our products come from proven manufacturers. Among our transistor suppliers you will find such brands as: NXP, Hottech, Infineon or Born. Each transistor is checked before being admitted to trading. These steps are taken in order to be sure that the client will receive a qualitative and fully functioning device.