IGBT transistors (results: 376)

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Collector-emitter voltage
Gate-emitter voltage
Max. collector current
Max collector current (impulse)
Max. dissipated power
Forvard volatge [Vgeth]
Gate charge
Case
Mounting
Manufacturer
Operating temperature (range)
IXGH30N60C3D1 60A; 600V; 220W; IGBT
IXGH30N60C3D1 TO247AD
  600V 20V 60A 150A 220W 3,0V ~ 5,5V 38nC TO247AD THT IXYS -55°C ~ 150°C
 
Item available on a request
                     
STGF7NC60HD Trans IGBT Chip N-CH 600V 10A 25000mW 3-Pin(3+Tab) TO-220FP
STGF7NC60HD TO220FP
 
 
Item available on a request
                     
STGW35HF60WDI STMicroelectronics Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
STGW35HF60WDI STMicroelectronics TO247
  600V 20V 60A 150A 200W 3,75V ~ 5,75V 140nC TO247 THT STMicroelectronics -55°C ~ 150°C
 
Item available on a request
                     
STGW35HF60WD 60A; 600V; 200W; IGBT
STGW35HF60WD TO247
  600V 20V 60A 150A 200W 3,75V ~ 5,75V 140nC TO247 THT STMicroelectronics -55°C ~ 150°C
 
Item available on a request
                     
FGD3440G2-F085 IGBT 400V 26.9A TO252AA Transistors - IGBTs - Single ; FGD3440G2_F085;
FGD3440G2-F085 TO252
 
 
Item available on a request
                     
SKM100GB12T4 Trans IGBT Module N-CH 1200V 160A 7-Pin Case GB
SKM100GB12T4 Rys.SKM100
  1200V 20V 100A 300A 5,0V ~ 6,5V 565nC Rys.SKM100 SEMIKRON -40°C ~ 175°C
 
Item available on a request
                     
WG50N65DHWQ IGBT TRENCH FD ST 650V 91A TO247; Trans IGBT Chip N-CH 650V 91A 278mW 3-Pin(3+Ta
WG50N65DHWQ TO247
 
 
Item available on a request
                     
DGTD65T15H2TF Trans IGBT Chip N-CH 650V 30A 48000mW 3-Pin(3+Tab) ITO-220AB Tube
DGTD65T15H2TF  
 
 
Item available on a request
                     
STGD4M65DF2 Trans IGBT Chip N-CH 650V 8A 68000mW 3-Pin(2+Tab) DPAK
STGD4M65DF2  
 
 
Item available on a request
                     
BGH75N65ZF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
BGH75N65ZF1 BASiC SEMICONDUCTOR Rys.TBGH75N65ZF1
  650V 20V 75A 300A 338W 4,2V ~ 5,8V 444nC TO247-4 THT BASiC SEMICONDUCTOR -40°C ~ 150°C
 
Item available on a request
                     
BGH75N120HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
BGH75N120HF1 BASiC SEMICONDUCTOR Rys.TBGH75N120HF1
  1200V 20V 75A 200A 568W 4,2V ~ 5,8V 398nC TO247-3 THT BASiC SEMICONDUCTOR -40°C ~ 150°C
 
Item available on a request
                     
BGH50N65ZF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
BGH50N65ZF1 BASiC SEMICONDUCTOR Rys.TBGH50N65ZF1
  650V 20V 50A 200A 297W 4,2V ~ 5,8V 308nC TO247-4 THT BASiC SEMICONDUCTOR -40°C ~ 150°C
 
Item available on a request
                     
BGH50N65HS1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
BGH50N65HS1 BASiC SEMICONDUCTOR Rys.TBGH50N65HS1
  650V 20V 50A 200A 297W 4,2V ~ 5,8V 308nC TO247-3 THT BASiC SEMICONDUCTOR -40°C ~ 150°C
 
Item available on a request
                     
BGH50N65HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
BGH50N65HF1 BASiC SEMICONDUCTOR Rys.TBGH50N65HF1
  650V 20V 50A 200A 297W 4,2V ~ 5,8V 308nC TO247-3 THT BASiC SEMICONDUCTOR -40°C ~ 150°C
 
Item available on a request
                     
BGH75N65HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
BGH75N65HF1 BASiC SEMICONDUCTOR Rys.TBGH75N65HF1
  650V 20V 75A 300A 405W 4,2V ~ 5,8V 444nC TO247-4 THT BASiC SEMICONDUCTOR -40°C ~ 150°C
 
Item available on a request
                     
BGH75N65HS1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
BGH75N65HS1 BASiC SEMICONDUCTOR Rys.TBGH75N65HS1
  650V 20V 75A 300A 405W 4,2V ~ 5,8V 444nC TO247-3 THT BASiC SEMICONDUCTOR -40°C ~ 150°C
 
Item available on a request
                     
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