IGBT transistors (results: 394)
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Case
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Collector-emitter voltage
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Forvard volatge [Vgeth]
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Gate charge
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Gate-emitter voltage
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Manufacturer
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Max. collector current
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Max collector current (impulse)
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Max. dissipated power
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Mounting
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Operating temperature (range)
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DDB6U104N16RRBPSA1 Infineon Technologies
LOW POWER ECONO AG-ECONO2B-211 transistors - igbts - modules
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Item available on a request
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STGW75H65DFB2-4
TRENCH GATE FIELD-STOP, 650 V, 7 Transistors - IGBTs - Single
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TO247
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Item available on a request
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IXXH30N60C3D1
Transistor IGBT ; 600V; 30V; 60A; 110A; 270W; 3,5~6V; 37nC; -55°C~175°C;
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TO247AD
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TO247AD | 600V | 3,5V ~ 6,0V | 37nC | 30V | IXYS | 60A | 110A | 270W | THT | -55°C ~ 175°C | ||
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Item available on a request
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STGWT40HP65FB STMicroelectronics
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
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TO-3P
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Item available on a request
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DGTD120T25S1PT
Trans IGBT Chip N-CH 1200V 50A 348000mW 3-Pin(3+Tab) TO-247
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TO247
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Item available on a request
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STGWA75H65DFB2
Transistor: IGBT; 650V; 71A; 357W; TO247-3; Transistors - IGBTs - Single; STGW75H65DFB2-4;
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TO247
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Item available on a request
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STGF7H60DF
Trans IGBT Chip N-CH 600V 14A 24000mW 3-Pin(3+Tab) TO-220FP
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Item available on a request
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STGF6M65DF2
Trans IGBT Chip N-CH 650V 12A 24200mW 3-Pin(3+Tab) TO-220FP
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Item available on a request
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STGF20H60DF
Trans IGBT Chip N-CH 600V 40A 37000mW 3-Pin(3+Tab) TO-220FP
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Item available on a request
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STGF19NC60KD
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP
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Item available on a request
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STGF15H60DF
Trans IGBT Chip N-CH 600V 30A 30000mW 3-Pin(3+Tab) TO-220FP
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Item available on a request
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STGF10M65DF2
Trans IGBT Chip N-CH 650V 20A 30000mW 3-Pin(3+Tab) TO-220FP
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Item available on a request
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STGF10H60DF
Trans IGBT Chip N-CH 600V 20A 30000mW 3-Pin(3+Tab) TO-220FP
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Item available on a request
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STGD7NC60HT4
Trans IGBT Chip N-CH 600V 25A 70000mW 3-Pin(2+Tab) DPAK
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Item available on a request
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STGD6NC60H-1
Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3+Tab) IPAK
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Item available on a request
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STGD4M65DF2
Trans IGBT Chip N-CH 650V 8A 68000mW 3-Pin(2+Tab) DPAK
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Item available on a request
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STGD25N40LZAG
Trans IGBT Chip N-CH 400V 25A 150000mW Automotive 3-Pin(2+Tab) DPAK
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Item available on a request
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STGB4M65DF2
Trans IGBT Chip N-CH 650V 8A 68000mW 3-Pin(2+Tab) D2PAK
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Item available on a request
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STGB40H65FB
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(2+Tab) D2PAK
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Item available on a request
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STGB30H60DFB
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(2+Tab) D2PAK
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Item available on a request
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STGB20N45LZAG
Trans IGBT Chip N-CH 450V 25A 150000mW Automotive 3-Pin(2+Tab) D2PAK
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Item available on a request
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STGB20M65DF2
Trans IGBT Chip N-CH 650V 40A 166000mW 3-Pin(2+Tab) D2PAK
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Item available on a request
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STGB20H60DF
Trans IGBT Chip N-CH 600V 20A 100000mW 3-Pin(2+Tab) D2PAK
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Item available on a request
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STGB18N40LZT4
Trans IGBT Chip N-CH 360V 30A 150000mW Automotive 3-Pin(2+Tab) D2PAK
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Item available on a request
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STGB15H60DF
Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(2+Tab) D2PAK
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Item available on a request
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STGB10H60DF
Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin(2+Tab) D2PAK
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BGH75N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
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Rys.TBGH75N65ZF1
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TO247-4 | 650V | 4,2V ~ 5,8V | 444nC | 20V | BASiC SEMICONDUCTOR | 75A | 300A | 338W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N120HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
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Rys.TBGH75N120HF1
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TO247-3 | 1200V | 4,2V ~ 5,8V | 398nC | 20V | BASiC SEMICONDUCTOR | 75A | 200A | 568W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65ZF1
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TO247-4 | 650V | 4,2V ~ 5,8V | 308nC | 20V | BASiC SEMICONDUCTOR | 50A | 200A | 297W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HS1
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TO247-3 | 650V | 4,2V ~ 5,8V | 308nC | 20V | BASiC SEMICONDUCTOR | 50A | 200A | 297W | THT | -40°C ~ 150°C | ||
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Item available on a request
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