IGBT transistors (results: 390)
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Collector-emitter voltage
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Gate-emitter voltage
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Max. collector current
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Max collector current (impulse)
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Max. dissipated power
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Forvard volatge [Vgeth]
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Gate charge
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Case
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Mounting
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Manufacturer
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Operating temperature (range)
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STGD5H60DF STMicroelectronics
IGBT 600V 10A 83W
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DPAK
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Item available on a request
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STGD6M65DF2 STMicroelectronics
IGBT 650V 12A 88W
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DPAK
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Item available on a request
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STGF10NC60KD
Trans IGBT Chip N-CH 600V 9A 25000mW 3-Pin(3+Tab) TO-220FP
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TO220FP
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Item available on a request
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STGW15M120DF3 STMicroelectronics
30A; 1200V; 259W; IGBT
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TO247
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Item available on a request
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IXXA50N60B3 IXYS
IGBT
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Item available on a request
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STGW30NC60VD
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247
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TO247
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Item available on a request
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IXXH150N60C3 IXYS
IGBT 600V TO247
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Item available on a request
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IKW50N65RH5XKSA1
INDUSTRY 14
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Item available on a request
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IKWH20N65WR6
IGBT TRENCH
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Item available on a request
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IKWH30N65WR5
IGBT TRENCH
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Item available on a request
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IKWH40N65WR6
IGBT TRENCH
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Item available on a request
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IKWH50N65WR6
IGBT TRENCH
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Item available on a request
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IKWH60N65WR6
IGBT TRENCH
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Item available on a request
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IKWH70N65WR6
IGBT TRENCH
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Item available on a request
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SKM100GB12T4
Trans IGBT Module N-CH 1200V 160A 7-Pin Case GB
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Rys.SKM100
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1200V | 20V | 100A | 300A | 5,0V ~ 6,5V | 565nC | Rys.SKM100 | SEMIKRON | -40°C ~ 175°C | ||||
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Item available on a request
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IKW40N60DTPXKSA1
Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247
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TO247
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Item available on a request
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IKW40N60H3FKSA1
Trans IGBT Chip N-CH 600V 80A 306000mW 3-Pin(3+Tab) TO-247
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TO247
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Item available on a request
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IKW50N60DTPXKSA1
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247
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TO247
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Item available on a request
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DDB6U104N16RRBPSA1 Infineon Technologies
LOW POWER ECONO AG-ECONO2B-211 transistors - igbts - modules
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Item available on a request
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IXTZ550N055T2
Trans MOSFET N-CH Si 55V 550A 6-Pin Case DE-475
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Item available on a request
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DGTD65T15H2TF
Trans IGBT Chip N-CH 650V 30A 48000mW 3-Pin(3+Tab) ITO-220AB Tube
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Item available on a request
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STGF19NC60KD
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP
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Item available on a request
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STGD4M65DF2
Trans IGBT Chip N-CH 650V 8A 68000mW 3-Pin(2+Tab) DPAK
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Item available on a request
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BGH75N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
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Rys.TBGH75N65ZF1
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650V | 20V | 75A | 300A | 338W | 4,2V ~ 5,8V | 444nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N120HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
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Rys.TBGH75N120HF1
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1200V | 20V | 75A | 200A | 568W | 4,2V ~ 5,8V | 398nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65ZF1
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HS1
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HF1
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HF1
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650V | 20V | 75A | 300A | 405W | 4,2V ~ 5,8V | 444nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HS1
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650V | 20V | 75A | 300A | 405W | 4,2V ~ 5,8V | 444nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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