IGBT transistors (results: 383)
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Collector-emitter voltage
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Gate-emitter voltage
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Max. collector current
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Max collector current (impulse)
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Max. dissipated power
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Forvard volatge [Vgeth]
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Gate charge
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Case
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Mounting
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Manufacturer
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Operating temperature (range)
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IRGP4066D-E
140A; 600V; 454W; IGBT w/ Diode
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TO247AD
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600V | 20V | 140A | 225A | 454W | 4,0V ~ 6,5V | 225nC | TO247AD | International Rectifier | -55°C ~ 175°C | |||
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Item available on a request
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IRGS14C40L
20A; 400V; 125W; IGBT IRGS14C40LPBF, IRGS14C40LTRLPBF
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TO263 (D2PAK)
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20A | 125W | 1,3V ~ 2,2V | 27nC | TO263 (D2PAK) | International Rectifier | -40°C ~ 175°C | ||||||
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Item available on a request
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IXGH30N60C3D1
60A; 600V; 220W; IGBT
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TO247AD
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600V | 20V | 60A | 150A | 220W | 3,0V ~ 5,5V | 38nC | TO247AD | THT | IXYS | -55°C ~ 150°C | ||
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Item available on a request
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JNG20T65KS JIAENSEMI
Transistor IGBT ; 650V; 30V; 40A; 60A; 139W; 5,1V~6,9V; 271nC; -55°C~150°C;
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TO263
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650V | 30V | 40A | 60A | 139W | 5,1V ~ 6,9V | 271nC | TO263 | SMD | JIAENSEMI | -55°C ~ 150°C | ||
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Item available on a request
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JNG40T120HS JIAENSEMI
Transistor IGBT ; 1200V; 30V; 80A; 120A; 300W; 4V~6V; 107nC; -55°C~155°C;
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TO247
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1200V | 30V | 80A | 120A | 300W | 4,0V ~ 6,0V | 107nC | TO247 | THT | JIAENSEMI | -55°C ~ 155°C | ||
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Item available on a request
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STGF7NC60HD
Trans IGBT Chip N-CH 600V 10A 25000mW 3-Pin(3+Tab) TO-220FP
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TO220FP
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Item available on a request
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IKW50N65RH5XKSA1
INDUSTRY 14
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Item available on a request
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IKWH20N65WR6
IGBT TRENCH
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Item available on a request
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IKWH30N65WR5
IGBT TRENCH
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Item available on a request
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IKWH40N65WR6
IGBT TRENCH
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Item available on a request
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IKWH50N65WR6
IGBT TRENCH
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Item available on a request
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IKWH60N65WR6
IGBT TRENCH
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Item available on a request
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IKWH70N65WR6
IGBT TRENCH
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Item available on a request
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SKM100GB12T4
Trans IGBT Module N-CH 1200V 160A 7-Pin Case GB
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Rys.SKM100
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1200V | 20V | 100A | 300A | 5,0V ~ 6,5V | 565nC | Rys.SKM100 | SEMIKRON | -40°C ~ 175°C | ||||
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Item available on a request
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IXTZ550N055T2
Trans MOSFET N-CH Si 55V 550A 6-Pin Case DE-475
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Item available on a request
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STGD4M65DF2
Trans IGBT Chip N-CH 650V 8A 68000mW 3-Pin(2+Tab) DPAK
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Item available on a request
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BGH75N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
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Rys.TBGH75N65ZF1
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650V | 20V | 75A | 300A | 338W | 4,2V ~ 5,8V | 444nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N120HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
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Rys.TBGH75N120HF1
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1200V | 20V | 75A | 200A | 568W | 4,2V ~ 5,8V | 398nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65ZF1
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HS1
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HF1
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HF1
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650V | 20V | 75A | 300A | 405W | 4,2V ~ 5,8V | 444nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HS1
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650V | 20V | 75A | 300A | 405W | 4,2V ~ 5,8V | 444nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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