IGBT transistors (results: 346)
Product | Cart |
Collector-emitter voltage
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Gate-emitter voltage
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Max. collector current
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Max collector current (impulse)
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Max. dissipated power
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Forvard volatge [Vgeth]
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Gate charge
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Case
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Mounting
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Manufacturer
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Operating temperature (range)
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IXGH30N60C3D1
60A; 600V; 220W; IGBT
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600V | 20V | 60A | 150A | 220W | 3,0V ~ 5,5V | 38nC | TO247AD | THT | IXYS | -55°C ~ 150°C | |||
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Item available on a request
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STGF7NC60HD
Trans IGBT Chip N-CH 600V 10A 25000mW 3-Pin(3+Tab) TO-220FP
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Item available on a request
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STGW35HF60WDI STMicroelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
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600V | 20V | 60A | 150A | 200W | 3,75V ~ 5,75V | 140nC | TO247 | THT | STMicroelectronics | -55°C ~ 150°C | |||
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Item available on a request
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STGW35HF60WD
60A; 600V; 200W; IGBT
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600V | 20V | 60A | 150A | 200W | 3,75V ~ 5,75V | 140nC | TO247 | THT | STMicroelectronics | -55°C ~ 150°C | |||
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Item available on a request
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STGW35NB60SD
70A; 600V; 200W; IGBT
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600V | 20V | 70A | 250A | 200W | 2,5V ~ 5,0V | 115nC | TO247 | THT | STMicroelectronics | -55°C ~ 150°C | |||
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Item available on a request
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STGWA25H120F2 STMicroelectronics
25A; 1200V; 375W; IGBT
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Item available on a request
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FGD3440G2-F085
IGBT 400V 26.9A TO252AA Transistors - IGBTs - Single ; FGD3440G2_F085;
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Item available on a request
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SKM100GB12T4
Trans IGBT Module N-CH 1200V 160A 7-Pin Case GB
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1200V | 20V | 100A | 300A | 5,0V ~ 6,5V | 565nC | Rys.SKM100 | SEMIKRON | -40°C ~ 175°C | |||||
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Item available on a request
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STGW60V60F STMicroelectronics
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
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Item available on a request
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BGH75N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
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650V | 20V | 75A | 300A | 338W | 4,2V ~ 5,8V | 444nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | |||
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Item available on a request
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BGH75N120HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
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1200V | 20V | 75A | 200A | 568W | 4,2V ~ 5,8V | 398nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | |||
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Item available on a request
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BGH50N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | |||
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Item available on a request
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BGH50N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | |||
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Item available on a request
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BGH50N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | |||
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Item available on a request
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BGH75N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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650V | 20V | 75A | 300A | 405W | 4,2V ~ 5,8V | 444nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | |||
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Item available on a request
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BGH75N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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650V | 20V | 75A | 300A | 405W | 4,2V ~ 5,8V | 444nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | |||
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Item available on a request
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IGBT Transistors
In our offer, you will find various types of transistors, including those referred to by the acronym IGBT. These transistors are a variant of bipolar models with a special construction, namely, they have an isolated gate. After all, IGBT stands for Insulated Gate Bipolar Transistor. You could consider IGBT transistors as a combination of MOSFET transistors (input) and bipolar transistors (output). Interestingly, for many applications, an IGBT transistor can be a cheaper alternative to traditional models due to its lower on-state voltage compared to MOSFET transistors with similar voltage ranges and sizes.
What Sets IGBT Transistors Apart?
IGBT transistors are distinguished by their bipolar current, which is associated with the flow of holes and electrons. Injecting hole carriers from the p+ region into the n- region significantly reduces the effective resistance in the drift region. This increase in conductivity results in a reduction in the collector-emitter voltage in the on-state. This factor is considered the main advantage of IGBT transistors when compared to traditional MOSFET transistors. However, it is important to note that the power IGBT transistor has a lower voltage obtained at the cost of limiting switching speed, with a particular focus on the turn-off speed.
Strengths and Weaknesses of IGBT Transistors
IGBT transistors perform excellently when working with higher voltages. However, it is important to be aware that IGBT transistors are generally not suitable for parallel connection. The devices in this category that you will find in our offer are primarily used in frequency converters with power ratings of up to several hundred watts. By using an IGBT transistor, you can reduce energy losses by up to 60%. Additionally, you will achieve a wider range of device regulation and better performance. If you are unsure which IGBT transistors will work best for your devices and projects, contact our staff who will assist you in choosing the right model. We also offer a range of other transistors – https://www.micros.com.pl/tranzystory/. We encourage you to explore the full offer.
IGBT - Transistors Available in Our Offer?
In our store, you will find various models of IGBT transistors from leading manufacturers. The individual models of these devices may differ in:
- collector-emitter voltage,
- gate-emitter voltage,
- maximum collector current,
- maximum pulse collector current,
- maximum power dissipation,
- on-state voltage,
- gate charge,
- package,
- brand,
- temperature range in which they can operate.
Each transistor defined by the IGBT acronym available in our offer is a high-quality device designed and manufactured with attention to detail. Therefore, by choosing to shop with us, you can be sure that the transistors you receive will perform their function correctly.