IGBT transistors (results: 347)
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Collector-emitter voltage
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Gate-emitter voltage
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Max. collector current
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Max collector current (impulse)
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Max. dissipated power
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Forvard volatge [Vgeth]
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Gate charge
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Case
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Mounting
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Manufacturer
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Operating temperature (range)
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IRGS14C40L
20A; 400V; 125W; IGBT IRGS14C40LPBF, IRGS14C40LTRLPBF
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TO263 (D2PAK)
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20A | 125W | 1,3V ~ 2,2V | 27nC | TO263 (D2PAK) | International Rectifier | -40°C ~ 175°C | ||||||
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Item available on a request
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IXGH30N60C3D1
60A; 600V; 220W; IGBT
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TO247AD
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600V | 20V | 60A | 150A | 220W | 3,0V ~ 5,5V | 38nC | TO247AD | THT | IXYS | -55°C ~ 150°C | ||
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Item available on a request
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STGF7NC60HD
Trans IGBT Chip N-CH 600V 10A 25000mW 3-Pin(3+Tab) TO-220FP
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TO220FP
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Item available on a request
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STGW35HF60WDI STMicroelectronics
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
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TO247
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600V | 20V | 60A | 150A | 200W | 3,75V ~ 5,75V | 140nC | TO247 | THT | STMicroelectronics | -55°C ~ 150°C | ||
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Item available on a request
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STGW35HF60WD
60A; 600V; 200W; IGBT
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TO247
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600V | 20V | 60A | 150A | 200W | 3,75V ~ 5,75V | 140nC | TO247 | THT | STMicroelectronics | -55°C ~ 150°C | ||
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Item available on a request
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STGW35NB60SD
70A; 600V; 200W; IGBT
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TO247
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600V | 20V | 70A | 250A | 200W | 2,5V ~ 5,0V | 115nC | TO247 | THT | STMicroelectronics | -55°C ~ 150°C | ||
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Item available on a request
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FGD3440G2-F085
IGBT 400V 26.9A TO252AA Transistors - IGBTs - Single ; FGD3440G2_F085;
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TO252
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Item available on a request
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SKM100GB12T4
Trans IGBT Module N-CH 1200V 160A 7-Pin Case GB
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Rys.SKM100
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1200V | 20V | 100A | 300A | 5,0V ~ 6,5V | 565nC | Rys.SKM100 | SEMIKRON | -40°C ~ 175°C | ||||
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Item available on a request
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DGTD65T15H2TF
Trans IGBT Chip N-CH 650V 30A 48000mW 3-Pin(3+Tab) ITO-220AB Tube
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Item available on a request
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STGW60V60F STMicroelectronics
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
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TO247
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Item available on a request
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BGH75N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
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Rys.TBGH75N65ZF1
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650V | 20V | 75A | 300A | 338W | 4,2V ~ 5,8V | 444nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N120HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
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Rys.TBGH75N120HF1
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1200V | 20V | 75A | 200A | 568W | 4,2V ~ 5,8V | 398nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65ZF1
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HS1
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HF1
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650V | 20V | 50A | 200A | 297W | 4,2V ~ 5,8V | 308nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HF1
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650V | 20V | 75A | 300A | 405W | 4,2V ~ 5,8V | 444nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HS1
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650V | 20V | 75A | 300A | 405W | 4,2V ~ 5,8V | 444nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
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Item available on a request
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