IGBT transistors (results: 399)
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Case
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Collector-emitter voltage
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Forvard volatge [Vgeth]
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Gate charge
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Gate-emitter voltage
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Manufacturer
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Max. collector current
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Max collector current (impulse)
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Max. dissipated power
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Mounting
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Operating temperature (range)
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DGTD65T15H2TF
Trans IGBT Chip N-CH 650V 30A 48000mW 3-Pin(3+Tab) ITO-220AB Tube
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Item available on a request
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STGD25N40LZAG
Trans IGBT Chip N-CH 400V 25A 150000mW Automotive 3-Pin(2+Tab) DPAK
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Item available on a request
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BGH75N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
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Rys.TBGH75N65ZF1
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TO247-4 | 650V | 4,2V ~ 5,8V | 444nC | 20V | BASiC SEMICONDUCTOR | 75A | 300A | 338W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N120HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
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Rys.TBGH75N120HF1
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TO247-3 | 1200V | 4,2V ~ 5,8V | 398nC | 20V | BASiC SEMICONDUCTOR | 75A | 200A | 568W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65ZF1
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TO247-4 | 650V | 4,2V ~ 5,8V | 308nC | 20V | BASiC SEMICONDUCTOR | 50A | 200A | 297W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HS1
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TO247-3 | 650V | 4,2V ~ 5,8V | 308nC | 20V | BASiC SEMICONDUCTOR | 50A | 200A | 297W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HF1
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TO247-3 | 650V | 4,2V ~ 5,8V | 308nC | 20V | BASiC SEMICONDUCTOR | 50A | 200A | 297W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HF1
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TO247-4 | 650V | 4,2V ~ 5,8V | 444nC | 20V | BASiC SEMICONDUCTOR | 75A | 300A | 405W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HS1
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TO247-3 | 650V | 4,2V ~ 5,8V | 444nC | 20V | BASiC SEMICONDUCTOR | 75A | 300A | 405W | THT | -40°C ~ 150°C | ||
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Item available on a request
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