IGBT transistors (results: 392)
| Product | Cart |
Collector-emitter voltage
|
Gate-emitter voltage
|
Max. collector current
|
Max collector current (impulse)
|
Max. dissipated power
|
Forvard volatge [Vgeth]
|
Gate charge
|
Case
|
Mounting
|
Manufacturer
|
Operating temperature (range)
|
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BGH75N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
|
|||||||||||||
Rys.TBGH75N65HF1
|
650V | 20V | 75A | 300A | 405W | 4,2V ~ 5,8V | 444nC | TO247-4 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
|
|
Item available on a request
|
||||||||||||
|
BGH75N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
|
|||||||||||||
|
Rys.TBGH75N65HS1
|
650V | 20V | 75A | 300A | 405W | 4,2V ~ 5,8V | 444nC | TO247-3 | THT | BASiC SEMICONDUCTOR | -40°C ~ 150°C | ||
|
|
Item available on a request
|
||||||||||||