IGBT transistors (results: 397)
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Case
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Collector-emitter voltage
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Forvard volatge [Vgeth]
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Gate charge
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Gate-emitter voltage
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Manufacturer
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Max. collector current
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Max collector current (impulse)
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Max. dissipated power
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Mounting
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Operating temperature (range)
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BGH75N120HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
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Rys.TBGH75N120HF1
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TO247-3 | 1200V | 4,2V ~ 5,8V | 398nC | 20V | BASiC SEMICONDUCTOR | 75A | 200A | 568W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65ZF1
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TO247-4 | 650V | 4,2V ~ 5,8V | 308nC | 20V | BASiC SEMICONDUCTOR | 50A | 200A | 297W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HS1
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TO247-3 | 650V | 4,2V ~ 5,8V | 308nC | 20V | BASiC SEMICONDUCTOR | 50A | 200A | 297W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH50N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HF1
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TO247-3 | 650V | 4,2V ~ 5,8V | 308nC | 20V | BASiC SEMICONDUCTOR | 50A | 200A | 297W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HF1
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TO247-4 | 650V | 4,2V ~ 5,8V | 444nC | 20V | BASiC SEMICONDUCTOR | 75A | 300A | 405W | THT | -40°C ~ 150°C | ||
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Item available on a request
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BGH75N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HS1
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TO247-3 | 650V | 4,2V ~ 5,8V | 444nC | 20V | BASiC SEMICONDUCTOR | 75A | 300A | 405W | THT | -40°C ~ 150°C | ||
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Item available on a request
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YGW40N65F1 LUXIN-SEMI
Transistor IGBT ; 650V; 20V; 80A; 120A; 250W; 4V~6V; 90nC; -40°C~150°C; Similar to: IKW40N60H3FKSA1; IRGP4640DPBF;
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TO247
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TO247 | 650V | 4,0V ~ 6,0V | 90nC | 20V | LUXIN-SEMI | 80A | 120A | 250W | THT | -40°C ~ 150°C | ||
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Item available on a request
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