Transistors (results: 8519)
Product | Cart |
Open channel resistance
|
Max. drain current
|
Max. power loss
|
Case
|
Manufacturer
|
Power dissipation
|
Current gain factor
|
Cutoff frequency
|
Gate charge
|
Max. dissipated power
|
Max. drain-source voltage
|
Max. collector current
|
Max collector-emmiter voltage
|
Max. collector current
|
Max collector current (impulse)
|
Forvard volatge [Vgeth]
|
Transistor type
|
Max. drain-gate voltage
|
Operating temperature (range)
|
Max. gate-source Voltage
|
Collector-emitter voltage
|
Mounting
|
Gate-emitter voltage
|
Transistor circuits [Y/N]
|
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI2306-TP
Transistor N-Channel MOSFET; 30V; 20V; 65mOhm; 20A; 620mW; -55°C~150°C;
|
||||||||||||||||||||||||||
65mOhm | 20A | 620mW | SOT23 | MCC | 30V | N-MOSFET | -55°C ~ 150°C | 20V | SMD | |||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBT2907A DIOTEC
Trans GP BJT PNP 60V 0.6A 250mW 3-Pin SOT-23
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
G05P06L
Transistor P-MOSFET; 60V; 20V; 450mOhm; 1,6A; 1,7W; -55°C ~ 150°C; Substitute: SI2309CDS-T1-GE3; SI2309CDS-T1-E3;
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBT3904 CJ
Transistor NPN; 300; 250mW; 40V; 200mA; 300MHz; -65°C ~ 150°C; Equivalent: MMBT3904,215; MMBT3904-7-F; MMBT3904LT1G; MMBT3904LT3G; MMBT3904-13-F; MMBT3904-TP; MMBT3904 RFG;
|
||||||||||||||||||||||||||
SOT23 | CJ | 250mW | 300 | 300MHz | 200mA | 40V | NPN | -65°C ~ 150°C | ||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBT3904HE3-TP
Bipolar (BJT) Transistor 40 V 200 mA 300MHz 350 mW Surface Mount SOT-23
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
AS3401
Transistor P-Channel MOSFET; 30V; 12V; 96mOhm; 4,4A; 1,2W; -55°C~150°C;
|
||||||||||||||||||||||||||
|
Item available on a request
|
96mOhm | 4,4A | 1,2W | SOT23 | AnBon | 30V | P-MOSFET | -55°C ~ 150°C | 12V | SMD | |||||||||||||||
|
Item in delivery
Estimated time: 2025-05-30
Quantity of pieces: 3000
|
|||||||||||||||||||||||||
LGE3415ES
P-CHANNEL MOSFET, SOT-23 Substitute: SI3415B-TP;
|
||||||||||||||||||||||||||
50mOhm | -4A | 1,4W | SOT23 | LGE | -20V | P-MOSFET | -55°C ~ 150°C | 10V | SMD | |||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SI3483DDV-T1-GE3
P-CHANNEL 30-V (D-S) MOSFET TSOP Transistors - FETs, MOSFETs - Single
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SI3900DV
Trans MOSFET N-CH 20V 2A 6-Pin TSOP Subsitute: SI3900DV-T1-E3; SI3900DV-T1; SI3900DV;
|
||||||||||||||||||||||||||
200mOhm | 2A | 830mW | TSOP06 | VISHAY | 20V | 2xN-MOSFET | -55°C ~ 150°C | 12V | SMD | |||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SI4143DY-T1-GE3 VISHAY
Trans MOSFET P-CH 30V 17.7A 8-Pin SOIC N
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SI4410BDY-T1-E3
N-MOSFET 7,5A 30V 1,4W
|
||||||||||||||||||||||||||
20mOhm | 7,5A | 1,4W | SOP08 | VISHAY | 30V | N-MOSFET | -55°C ~ 150°C | 20V | SMD | |||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SI4410DY
N-MOSFET 10A 30V 2.5W 0.0135Ω
|
||||||||||||||||||||||||||
20mOhm | 10A | 2,5W | SOP08 | International Rectifier | 30V | N-MOSFET | -55°C ~ 150°C | 20V | SMD | |||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBT5551HE3-TP
Trans GP BJT NPN 160V 0.6A 300mW Automotive 3-Pin SOT-23
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SI4435BDY
P-MOSFET -9.1A -30V 2.5W 0.02Ohm;
|
||||||||||||||||||||||||||
20mOhm | -9,1A | 2,5W | SOP08 | VISHAY | -30V | P-MOSFET | -55°C ~ 150°C | 20V | SMD | |||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
G2K8P15S
Transistor MOSFET; SOP-8; P-Channel; NO ESD; -150V; -2.2A; 2.5W; -2.2V; 277mΩ Si4455DY;
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBT8050D(1.5A)
25V 350mW 160@100mA,1V 1.5A NPN SOT-23 Bipolar Transistors - BJT ROHS
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBT8550D(1.5A)
25V 350mW 160@100mA,1V 1.5A PNP SOT-23 Bipolar Transistors - BJT ROHS
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBTA06 China
NPN 500mA 80V 225mW 100MHz
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBTA14 China
Darlington NPN 300mA 30V 300mW 125MHz
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SI4948EY-T1-E3
P-MOSFET 3.1A 60V 2.4W
|
||||||||||||||||||||||||||
150mOhm | 3,1A | 2,4W | SOP08 | VISHAY | 60V | 2xP-MOSFET | -55°C ~ 175°C | 20V | SMD | |||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SI4963DY VISHAY
2xP-MOSFET 20V 12V ID6.2A obsolete; Substitute: SI4963DY-T1-E3
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SI5618-TP
P-CHANNEL MOSFET, SOT-23 PACKAGE Transistors - FETs, MOSFETs - Single
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBTA56 China
PNP -500mA -80V 225mW 50MHz
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBTA94 DIOTEC
Trans GP BJT PNP 400V 0.3A 250mW 3-Pin SOT-23 T/R Substitute: MMBTA94-DIO;
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMBTRC101SS
Tranzystor: NPN ; bipolarny ; BRT ; 50V ; 100mA ; 200mW ; SOT23 ; R1:4,7k? SMD Digital NPN Transistors ; MMBTRC101SS-DIO
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SI7818DN-T1-E3
Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 SI7818DN; SI7818DN-T1-GE3;
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMPQ2222A
Trans GP BJT NPN 40V 0.5A 1000mW 16-Pin SOIC
|
||||||||||||||||||||||||||
SOP16 | ON SEMICONDUCTOR | 1W | 300 | 350MHz | 500mA | 40V | NPN | -55°C ~ 150°C | ||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
MMSS8550-H-TP
Trans GP BJT PNP 25V 1.5A 3-Pin SOT-23
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
G180N06S2
Transistor MOSFET; SOP-8; DUAL; N-Channel; NO ESD; 60V; 8A; 2W; 1.5V; 16.5mΩ; 18mΩ Si4946CDY; Si9945BDY; Si9634DY; G05N06S2 GOFORD; G06N06S2 GOFORD; G09N06S2 GOFORD
|
||||||||||||||||||||||||||
|
Item available on a request
|
|||||||||||||||||||||||||
SIA431DJ-T1-GE3
Trans MOSFET P-CH 20V 9.6A 6-Pin PowerPAK SC-70
|
||||||||||||||||||||||||||
|
Item available on a request
|
Transistors
Field effect, bipolar and IGBT transistors - all those three types can be found in the Micros store. Get acquainted with the usage of transistors and what are the differences between particular types. Please check why it is worth choosing products offered by us.
What is a transistor and what is it used for?
Transistor is a semiconductor that has the capability of amplifying the electric signal.
The device is characterised by small size, hence it replaced vacuum tubes used before. It is believed that one of the main factors for the electronic development acceleration in the recent decades was introducing transistors to the market. It was possible thanks to the capability of significantly amplifying the signal by using small and not so complicated elements. However, why in fact it turned out to be that important and what are the uses of transistors in present day electronics? Here are few examples:
- It is the most important part of amplifiers;
- It is used as a structural element in semiconductor memory;
- It takes part in a signal transmission, e.g. in phase shift modules and generators;
Types of transistors
It is hard to answer the question “What are transistors used for?” without explaining what are the differences between them. In Micros offer you will find every transistor that you might need. Our offer includes devices with a variety of applications, because our aim is to meet the needs of every customer. When it comes to transistors, we can distinguish three main types, and dozens of devices from each type can be found in the relevant product category in our store. The three main types are:
- Field effect transistors
- Bipolar transistors
- IGBT transistors
We can assume that the field effect transistors are the most classic version of transistors. This invention is nearly 100 years old, however it is still incredibly useful. FET(Field Effect Transistor) consists of one semiconductor layer and the current is controlled by using the electromagnetic field.
Bipolar transistors, which are also available in our offer, are made up of three semiconductor layers, and each one of them represents a different type of semiconductivity. IGBT transistors on the other hand are a variety of bipolar transistors equipped with additional insulated gate.
Transistors in our offer
Our offer includes transistors with a vast variety of applications. We provide numerous FET models, called unipolar, which are essential parts of integrated circuits or switches. If you need parts for current amplifiers, choose our bipolar transistors. Moreover, essential parts for photovoltaic installations can be found in the “IGBT Transistors” category.
Our products come from proven manufacturers. Among our transistor suppliers you will find such brands as: NXP, Hottech, Infineon or Born. Each transistor is checked before being admitted to trading. These steps are taken in order to be sure that the client will receive a qualitative and fully functioning device.